Harnessing Memory Effects in Nanostructured and Semiconducting Systems

• Grant number: 25/04805-0
• Support Opportunities: Regular Research Grants
• Start date: November 01, 2025
• End date: October 31, 2028
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Victor Lopez Richard
• Grantee: Victor Lopez Richard
• Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
• City of the host institution: São Carlos

Abstract

Memory-enabled devices, such as memristors, memcapacitors, and meminductors, offer transformative opportunities for computing, sensing, and optoelectronic applications. This proposal aims to advance the understanding and practical implementation of memory effects in nanostructured and semiconducting systems by integrating experimental and theoretical approaches. Our central hypothesis is that memory functionalities arise from the interplay between intrinsic material properties and external driving conditions, such as electric fields, optical excitation, and environmental stimuli. By systematically characterizing these effects, we will develop universal classification schemes for memory responses, explore novel device architectures, and enable innovative applications in neuromorphic computing and optoelectronics.Key objectives include (i) establishing a comprehensive framework for memory classification based on hysteresis topologies and transport dynamics, (ii) designing and fabricating memory-enabled field-effect transistors and laterally gated sensors, (iii) investigating nonlinear circuit behavior and neuromorphic networks for reservoir computing, and (iv) advancing optoelectronic functionalities such as mem-emitters and light-driven memory elements. The project builds upon our extensive expertise and strong collaboration between UFSCar and the University of Würzburg, leveraging advanced fabrication and characterization techniques, including broadband dielectric spectroscopy, time-domain methods, and optical spectroscopies.A central innovation is the exploration of hybrid transistor architectures that exhibit coexisting memristive, memcapacitive, and apparent inductive responses. These functionalities will be tailored to optimize energy-efficient computing, subthreshold switching, and high-performance pattern recognition. In parallel, the project will pioneer the development of optoelectronic memory, where photon-induced charge trapping and polarization fluctuations will be exploited for memory storage and neuromorphic applications. By bridging electronic, photonic, and electrochemical memory paradigms, we aim to unlock new possibilities for future memory-integrated circuits and sensing technologies.The expected outcomes include fundamental insights into memory emergence, experimental demonstrations of novel device architectures, and practical frameworks for their characterization and implementation. The proposed research will contribute to advancing semiconductor technology, fostering interdisciplinary applications in artificial intelligence, and strengthening Brazil-Germany scientific collaboration. (AU)