Propriedades eletronicas em nanoestruturas: nanofios de oxidos metalicos

• Grant number: 09/51740-9
• Support Opportunities: Regular Research Grants
• Start date: December 01, 2009
• End date: November 30, 2011
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Adenilson José Chiquito
• Grantee: Adenilson José Chiquito
• Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
• City of the host institution: São Carlos

Abstract

The basic objective of the present project is the study of the electron's transport mechanisms in nanostructures obtained from metallic oxides. Investigations of the electronic and structural disorder, dimensionality and doping (both intentional and non-intentional) roles on the electron transport will conducted. The results will be used in order to study the physical processes underlying the observed device' operation; additionally they will be used as basic information in the development of electronic and optoelectronic devices, as well. Field effect transistors and other devices in different geometries will be used for direct measurements of fundamental parameters such as the specific contact resistance. In this way, the continuity of the research activities initiated recently through FAPESP grants (2004/07311-4, 2005/51245-7 and 2007/58304-4) is also an objective of this present proposal. In these previous activities we have achieved the necessary initial conditions to the manufacture of devices based on nanostructures and also important advances in this specific area, contributing for both Physics and technological applications. From this point, we intended to make advances in the development of new nanometric scale devices by using structures with lower dimensions. The additional data from optical experiments (photo-current and photo-luminescence) will be used together with transport data, leading to a complete description of the samples/devices studied. (AU)

Scientific publications

(4)

(The scientific publications listed on this page originate from the Web of Science or SciELO databases. Their authors have cited FAPESP grant or fellowship project numbers awarded to Principal Investigators or Fellowship Recipients, whether or not they are among the authors. This information is collected automatically and retrieved directly from those bibliometric databases.)

SIMON, R. A.; KAMIMURA, H.; BERENGUE, O. M.; LEITE, E. R.; CHIQUITO, A. J.. Disorder induced interface states and their influence on the AI/Ge nanowires Schottky devices. Journal of Applied Physics, v. 114, n. 24, DEC 28 2013. (09/51740-9)

MOISES, LUCAS A.; CHIQUITO, ADENILSON J.. Memristive behavior in SnO₂ wires guided by surface oxygen vacancy motion and H₂O molecules: A study. Journal of Applied Physics, v. 137, n. 4, p. 9-pg., 2025-01-28. (09/51740-9)

KAMIMURA, H.; GOUVEIA, R. C.; DALMASCHIO, C. J.; LEITE, E. R.; CHIQUITO, A. J.. Synthesis and electrical characterization of Zn3P2 nanowires. Semiconductor Science and Technology, v. 29, n. 1, JAN 2014. (09/51740-9, 12/06916-4)

CHIQUITO, ADENILSON J.; AMORIM, CLEBER A.; BERENGUE, OLIVIA M.; ARAUJO, LUANA S.; BERNARDO, ERIC P.; LEITE, EDSON R.. Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices. JOURNAL OF PHYSICS-CONDENSED MATTER, v. 24, n. 22, JUN 6 2012. (09/51740-9)