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Askhat Bakarov | Institute of Semiconductors Physics/Russian Academy - Rússia

Grant number: 05/02895-9
Support type:Research Grants - Visiting Researcher Grant - International
Duration: February 15, 2006 - May 14, 2006
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal researcher:Gennady Gusev
Grantee:Gennady Gusev
Visiting researcher: Askhat Bakarov
Visiting researcher institution: Russian Academy of Sciences (RAS), Russia
Home Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

The visit of Dr. Askhat Bakarov will be very useful to mount long term collaboration between Novosibirsk and different groups in Brazil studied physics of the semiconductor nanostructures. Among them are Laboratorio de Novos Materiais Semicondutores (LNMS), Instituto de Fisica, Universidade de São Paulo, theoretical groups in Universidade Federal de São Carlos, Instituto de Fisica, Universidade do Estado de Rio de Janeiro, Instituto de Fisica, Universidade Federal do Rio de Janeiro and many others. Specially, Prof. G.M. Gusev in LNMS, IF-USP has developed several projects, including international (USP-COFECUB). The principal focus of this proposal will be on optimization of the growth conditions of the semiconductor nanostructures for applications in spintron ics. The basic structure, which can be used for g=0 spintronic devices is GaAs/AlGaAs quantum well. Our researches are in the way to new generation of the spintronic devices. Technological and physical problems considered in this project may stimulate the further developments of the physic of the spintronic nanodevices in Brazil. (AU)

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