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Olshanetsky Evgenii | Institute of Semiconductor Physics - Rússia

Grant number: 08/09212-2
Support type:Research Grants - Visiting Researcher Grant - International
Duration: March 15, 2009 - June 14, 2009
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal researcher:Gennady Gusev
Grantee:Gennady Gusev
Visiting researcher: Olshanetsky Evgenii
Visiting researcher institution: Siberian Branch of the Russian Academy of Sciences (SB RAS), Russia
Home Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

The visit of Dr. E.B.Olshanetsky will be very helpful to continue a long-term collaboration between Novosibirsk and the various groups dedicated to the study of nanostructured systems in Brazil. Among these groups are the New Semiconductor Materials Laboratory of the Institute of Physics, University of São Paulo (LNMS-IFUSP), also theoretical and experimental groups of the University of San Carlos, the Institute of Physics of San Carlos, USP and others. As leader of LNMS of IFUSP, I have developed several major projects, including the international USP-COFECUB. The general objective of the project is studying interaction between electrons and holes in nanostructures semiconductor-based quantum wells of HgTe. We are proposing these effects in search of HgTe quantum wells grown at the Institute of Physics of Semiconductors, Novosibirsk. The research points toward a new generation of electronic devices based on quantum mechanics. The benefits of this project for both groups, Sao Paulo and Novosibirsk, are: The rise of knowledge of physics low consideration, the development of techniques of growth necessary to achieve quantum wells of HgTe high-quality and possible application of this knowledge (and its consequences) in future devices. (AU)

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