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Askhat bakarov | Russian academy of sciences - Russia

Grant number: 08/09213-9
Support type:Research Grants - Visiting Researcher Grant - International
Duration: May 04, 2009 - July 31, 2009
Field of knowledge:Physical Sciences and Mathematics - Physics
Principal Investigator:Gennady Gusev
Grantee:Gennady Gusev
Visiting researcher: Askhat Bakarov
Visiting researcher institution: Russian Academy of Sciences (RAS), Russia
Home Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

The visit of Dr. A.K. Bakarov will be very useful for further collaboration, long term, between Novosibirsk and the various groups dedicated to the study of nanostructured systems in Brazil. Among these groups are the New Semiconductor Materials Laboratory of the Institute of Physics, University of Sao Paulo (LNMS-IFUSP), also theoretical and experimental groups of the Federal University of Sao Carlos, the Institute of Physics of Sao Carlos, USP and many others. As leader of LNMS of IFUSP, I have developed several major projects, including the international USP-COFECUB. The general objective of the project is to study nanostructures for semiconductor design of new quantum devices. During his last visit (FAPESP Case No: 2005/03998-6) Dr. A.K. Bakarov held growth over 30 samples. The effective use of super-networks of GaAs / AlGaAs of short period rather than a simple barrier of AlGaAs was chosen to increase mobility in samples of single and double quantum wells of GaAs. The mobility at low temperature for electrons in these structures is high in the order of 1.2000.000cm2 / (Vs). Several studies have been published and submitted (among them 1 Physical Review Letters and 6 Physical Review B) involving the use of these samples [Ref.1-7], and several studies are under preparation. We are proposing the growth of new semiconductor structures including wells double and triple with two-dimensional gas of high mobility. The main focus of this proposal will be the optimization of conditions for the growth of such material in order to increase the mobility of electrons and amplify the quantum effects. Our research points toward a new generation of electronic devices based on quantum mechanics. The discussion of physical problems and technology related to the manufacture of such systems in IFUSP and other laboratories and what measures will be carried out LNMS-IFUSP, may accelerate the development of nanoelectronics in Brazil. (AU)

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