Hyperfine interaction studies of dilute magnetic semiconductors

• Grant number: 10/06311-0
• Support Opportunities: Research Grants - Visiting Researcher Grant - International
• Start date: October 18, 2010
• End date: November 01, 2010
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Rajendra Narain Saxena
• Grantee: Rajendra Narain Saxena
• Visiting researcher: Reiner Vianden
• Visiting researcher institution: Universität Bonn, Germany
• Host Institution: Instituto de Pesquisas Energéticas e Nucleares (IPEN). Secretaria de Desenvolvimento Econômico (São Paulo - Estado). São Paulo , SP, Brazil

Abstract

The present work plan will focus on the characterization of the samples of pure ZnO and those doped with some 3d transition elements (T = Cr, Mn, Fe, Co e Ni) in search of Dilute Magnetic Semiconductor (DMS). The investigation will be carried out with a microscopic technique, Perturbed Gamma-Gamma Angular Correlation (PAC) by measuring the magnetic hyperfine field (mhf) and electric field gradient (efg) at the site of nuclear probe. 111In will be used as the nuclear probe introduced in the sample during the preparation of Zn1-xOTx using sol-gel chemical method. The behavior of the hmf in dilute magnetic semiconductor as a function of temperature and different dopant concentrations will be studied. A systematic study of the hyperfine parameters such as hmf and efg as well as the magnetic transition temperature will be carried out as a function of electronic structure of 3d transition element used as dopant. This study is the part of a Ph.D. thesis of one of the student of our research group at IPEN. Dr. Vianden will participate during his visit to our laboratory, in some of the on going experiments interacting with our students. Apart from participating in some of the experiments Dr. Vianden will present a couple of seminars about the research work being carried out in his laboratory in Bonn under his leadership for the members of our research group with special emphasis on semiconductor materials and radioactive ion implantation. (AU)