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Optical and transport properties of two-dimensional semicondutors based on transition metal dichalcogenides

Grant number: 16/10668-7
Support type:Regular Research Grants
Duration: August 01, 2016 - August 31, 2018
Field of knowledge:Physical Sciences and Mathematics - Physics
Principal Investigator:Yara Galvão Gobato
Grantee:Yara Galvão Gobato
Home Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil

Abstract

In this work, we will investigated transport and optical properties of group-VI metal dichalcogenides (TMD) two-dimensional (2D) semiconductors which are direct band gap semiconductors which exhibit strong optical emission and are good candidates for spin-valley physics. We will investigate polarization resolved luminescence and magnetoluminescence and photocorrent properties in monolayers, multilayers and heterostructures of TMDs grown by chemical vapor depositon in international collaborations. (AU)

Scientific publications (15)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GALVAO GOBATO, Y.; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; LEGER, Y.; CARRERE, H.; BAHRI, M.; PATRIARCHE, G.; MARIE, X.; CORNET, C. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys. Journal of Alloys and Compounds, v. 814, JAN 25 2020. Web of Science Citations: 0.
PITON, MARCELO RIZZO; HAKKARAINEN, TEEMU; HILSKA, JOONAS; KOIVUSALO, EERO; LUPO, DONALD; AVANCO GALETI, HELDER VINICIUS; GOBATO, YARA GALVAO; GUINA, MIRCEA. Optimization of Ohmic Contacts to p-GaAs Nanowires. NANOSCALE RESEARCH LETTERS, v. 14, n. 1 DEC 2019. Web of Science Citations: 0.
PITON, MARCELO RIZZO; KOIVUSALO, EERO; HAKKARAINEN, TEEMU; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; TALMILA, SOILE; SOUTO, SERGIO; LUPO, DONALD; GOBATO, YARA GALVAO; GUINA, MIRCEA. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, v. 30, n. 33 AUG 16 2019. Web of Science Citations: 1.
HAKKARAINEN, TEEMU; PITON, MARCELO RIZZO; FIORDALISO, ELISABETTA MARIA; LESHCHENKO, EGOR D.; KOELLING, SEBASTIAN; BETTINI, JEFFERSON; AVANCO GALETI, HELDER VINICIUS; KOIVUSALO, EERO; GOBATO, YARA GALVA; RODRIGUES, ARIANO DE GIOVANNI; LUPO, DONALD; KOENRAAD, PAUL M.; LEITE, EDSON ROBERTO; DUBROVSKII, VLADIMIR G.; GUINA, MIRCEA. Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires. PHYSICAL REVIEW MATERIALS, v. 3, n. 8 AUG 5 2019. Web of Science Citations: 0.
SINGH, MOHIT KUMAR; BHUNIA, AMIT; AL HUWAYZ, MARYAM; GOBATO, Y. GALVAO; HENINI, MOHAMED; DATTA, SHOUVIK. Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dot-based p-i-n light emitting diodes. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 52, n. 9 FEB 27 2019. Web of Science Citations: 0.
KOIVUSALO, EERO S.; HAKKARAINEN, TEEMU V.; GALETI, HELDER V. A.; GOBATO, YARA G.; DUBROVSKII, VLADIMIR G.; GUINA, MIRCEA D. Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires. Nano Letters, v. 19, n. 1, p. 82-89, JAN 2019. Web of Science Citations: 3.
GUNES, M.; UKELGE, M. O.; DONMEZ, O.; EROL, A.; GUMUS, C.; ALGHAMDI, H.; GALETI, H. V. A.; HENINI, M.; SCHMIDBAUER, M.; HILSKA, J.; PUUSTINEN, J.; GUINA, M. Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 12 DEC 2018. Web of Science Citations: 0.
MONDAL, SANJIB; GHOSH, ANUPAM; RIZZO PITON, M.; GOMES, JOAQUIM P.; FELIX, JORLANDIO F.; GALVAO GOBATO, Y.; AVANCO GALETI, H. V.; CHOUDHURI, B.; DWIVEDI, S. M. M. DHAR; HENINI, M.; MONDAL, ANIRUDDHA. Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 29, n. 22, p. 19588-19600, NOV 2018. Web of Science Citations: 3.
AL MASHARY, FAISAL S.; DE CASTRO, SUELEN; DA SILVA, ARLON FERNANDO; FELIX, JORLANDIO FRANCISCO; PITON, MARCELO RIZZO; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; GOBATO, YARA GALVAO; AL SAQRI, NOOR; HENINI, MOHAMED; AL HUWAYZ, MARYAM M.; ALBADRI, ABDULRAHMAN M.; ALYAMANI, AHMED Y.; ALBRITHEN, HAMAD A.; ALHUSAINI, SAMI A.; ALJABER, KHALID M.; ALANAZI, ALI Z.; ALGHAMDI, FAHAD S. Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. Journal of Alloys and Compounds, v. 766, p. 194-203, OCT 25 2018. Web of Science Citations: 5.
BHUNIA, AMIT; SINGH, MOHIT KUMAR; GOBATO, Y. GALVAO; HENINI, MOHAMED; DATTA, SHOUVIK. Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy. PHYSICAL REVIEW APPLIED, v. 10, n. 4 OCT 17 2018. Web of Science Citations: 0.
PRANDO, G. A.; ORSI GORDO, V.; PUUSTINEN, J.; HILSKA, J.; ALGHAMDI, H. M.; SOM, G.; GUNES, M.; AKYOL, M.; SOUTO, S.; RODRIGUES, A. D.; GALETI, H. V. A.; HENINI, M.; GALVAO GOBATO, Y.; GUINA, M. Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8 AUG 2018. Web of Science Citations: 0.
ORSI GORDO, V.; BALANTA, M. A. G.; GALVAO GOBATO, Y.; COVRE, F. S.; GALETI, H. V. A.; IIKAWA, F.; COUTO, JR., O. D. D.; QU, F.; HENINI, M.; HEWAK, D. W.; HUANG, C. C. Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers. NANOSCALE, v. 10, n. 10, p. 4807-4815, MAR 14 2018. Web of Science Citations: 7.
GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. JOURNAL OF ELECTRONIC MATERIALS, v. 47, n. 3, p. 1780-1785, MAR 2018. Web of Science Citations: 0.
BHUNIA, AMIT; SINGH, MOHIT KUMAR; GALVAO GOBATO, Y.; HENINI, MOHAMED; DATTA, SHOUVIK. Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature. Journal of Applied Physics, v. 123, n. 4 JAN 28 2018. Web of Science Citations: 1.
AL SAQRI, NOOR ALHUDA; MONDAL, ANIRUDDHA; FELIX, JORLANDIO FRANCISCO; GOBATO, YARA GALVAO; GORDO, VANESSA ORSI; ALBALAWI, HIND; JAMEEL, DLER; ALGHAMDI, HAIFA; AL MASHARY, FAISAL; TAYLOR, DAVID; ABD EL-SADEK, MAHMMOUD S.; HENINI, MOHAMED. Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques. Journal of Alloys and Compounds, v. 698, p. 883-891, MAR 25 2017. Web of Science Citations: 8.

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