Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides

• Grant number: 16/10668-7
• Support Opportunities: Regular Research Grants
• Start date: August 01, 2016
• End date: August 31, 2018
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Yara Galvão Gobato
• Grantee: Yara Galvão Gobato
• Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
• City of the host institution: São Carlos

Abstract

In this work, we will investigated transport and optical properties of group-VI metal dichalcogenides (TMD) two-dimensional (2D) semiconductors which are direct band gap semiconductors which exhibit strong optical emission and are good candidates for spin-valley physics. We will investigate polarization resolved luminescence and magnetoluminescence and photocorrent properties in monolayers, multilayers and heterostructures of TMDs grown by chemical vapor depositon in international collaborations. (AU)

Scientific publications

(24)

(The scientific publications listed on this page originate from the Web of Science or SciELO databases. Their authors have cited FAPESP grant or fellowship project numbers awarded to Principal Investigators or Fellowship Recipients, whether or not they are among the authors. This information is collected automatically and retrieved directly from those bibliometric databases.)

FRANCO, DOUGLAS F.; MANZANI, DANILO; CARVAJAL, EDUAR E.; PRANDO, GABRIELA AUGUSTA; DONOSO, JOSE PEDRO; MAGON, CLAUDIO J.; ANTONIO, SELMA G.; GOBATO, YARA GALVAO; NALIN, MARCELO. Optical and EPR studies of zinc phosphate glasses containing Mn2+ ions. Journal of Materials Science, v. 55, n. 23, SI, MAY 2020. (18/16126-7, 16/10668-7, 13/07793-6, 16/16900-9)

KOIVUSALO, EERO S.; HAKKARAINEN, TEEMU V.; GALETI, HELDER V. A.; GOBATO, YARA G.; DUBROVSKII, VLADIMIR G.; GUINA, MIRCEA D.. Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires. Nano Letters, v. 19, n. 1, p. 82-89, JAN 2019. (16/10668-7, 14/50513-7)

SOUTO, S.; HILSKA, J.; GOBATO, Y. GALVAO; SOUZA, D.; ANDRADE, M. B.; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.. Raman spectroscopy of GaSb_1-xBi_x alloys with high Bi content. Applied Physics Letters, v. 116, n. 20, p. 5-pg., 2020-05-18. (16/10668-7, 14/50513-7)

PITON, MARCELO R.; KOIVUSALO, EERO; SUOMALAINEN, SOILE; HAKKARAINEN, TEEMU; SOUTO, S.; GALETI, HELDER V. A.; SCHRAMM, ANDREAS; GOBATO, Y. GALVAO; GUINA, MIRCEA; IEEE. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy. 2017 32ND SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO): CHIP ON THE SANDS, v. N/A, p. 4-pg., 2017-01-01. (14/50513-7, 16/10668-7)

BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GALVAO GOBATO, Y.; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; et al. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys. Journal of Alloys and Compounds, v. 814, JAN 25 2020. (14/50513-7, 16/10668-7)

PITON, MARCELO RIZZO; HAKKARAINEN, TEEMU; HILSKA, JOONAS; KOIVUSALO, EERO; LUPO, DONALD; AVANCO GALETI, HELDER VINICIUS; GOBATO, YARA GALVAO; GUINA, MIRCEA. Optimization of Ohmic Contacts to p-GaAs Nanowires. NANOSCALE RESEARCH LETTERS, v. 14, n. 1, DEC 2019. (14/50513-7, 16/10668-7)

AL MASHARY, FAISAL S.; DE CASTRO, SUELEN; DA SILVA, ARLON FERNANDO; FELIX, JORLANDIO FRANCISCO; PITON, MARCELO RIZZO; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; GOBATO, YARA GALVAO; AL SAQRI, NOOR; HENINI, MOHAMED; et al. Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. Journal of Alloys and Compounds, v. 766, p. 194-203, OCT 25 2018. (14/50513-7, 16/10668-7)

SOUTO, S.; HILSKA, J.; GOBATO, Y. GALVAO; SOUZA, D.; ANDRADE, M. B.; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.. Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, v. 116, n. 20, MAY 18 2020. (14/50513-7, 16/10668-7)

MONDAL, SANJIB; GHOSH, ANUPAM; RIZZO PITON, M.; GOMES, JOAQUIM P.; FELIX, JORLANDIO F.; GALVAO GOBATO, Y.; AVANCO GALETI, H. V.; CHOUDHURI, B.; DWIVEDI, S. M. M. DHAR; HENINI, M.; et al. Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 29, n. 22, p. 19588-19600, NOV 2018. (16/10668-7)

BHUNIA, AMIT; SINGH, MOHIT KUMAR; GOBATO, Y. GALVAO; HENINI, MOHAMED; DATTA, SHOUVIK. Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy. PHYSICAL REVIEW APPLIED, v. 10, n. 4, OCT 17 2018. (18/01808-5, 16/10668-7)

AL SAQRI, NOOR ALHUDA; MONDAL, ANIRUDDHA; FELIX, JORLANDIO FRANCISCO; GOBATO, YARA GALVAO; GORDO, VANESSA ORSI; ALBALAWI, HIND; JAMEEL, DLER; ALGHAMDI, HAIFA; AL MASHARY, FAISAL; TAYLOR, DAVID; et al. Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques. Journal of Alloys and Compounds, v. 698, p. 883-891, MAR 25 2017. (12/24055-6, 16/10668-7)

GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. JOURNAL OF ELECTRONIC MATERIALS, v. 47, n. 3, p. 1780-1785, MAR 2018. (12/24055-6, 16/10668-7)

PITON, MARCELO RIZZO; KOIVUSALO, EERO; HAKKARAINEN, TEEMU; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; TALMILA, SOILE; SOUTO, SERGIO; LUPO, DONALD; GOBATO, YARA GALVAO; GUINA, MIRCEA. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, v. 30, n. 33, AUG 16 2019. (14/50513-7, 18/01808-5, 16/10668-7)

ORSI GORDO, V.; BALANTA, M. A. G.; GALVAO GOBATO, Y.; COVRE, F. S.; GALETI, H. V. A.; IIKAWA, F.; COUTO, JR., O. D. D.; QU, F.; HENINI, M.; HEWAK, D. W.; et al. Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers. NANOSCALE, v. 10, n. 10, p. 4807-4815, MAR 14 2018. (16/16365-6, 14/50513-7, 12/11382-9, 16/10668-7)

GUNES, M.; UKELGE, M. O.; DONMEZ, O.; EROL, A.; GUMUS, C.; ALGHAMDI, H.; GALETI, H. V. A.; HENINI, M.; SCHMIDBAUER, M.; HILSKA, J.; et al. Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 12, DEC 2018. (14/50513-7, 16/10668-7)

HAKKARAINEN, TEEMU; PITON, MARCELO RIZZO; FIORDALISO, ELISABETTA MARIA; LESHCHENKO, EGOR D.; KOELLING, SEBASTIAN; BETTINI, JEFFERSON; AVANCO GALETI, HELDER VINICIUS; KOIVUSALO, EERO; GOBATO, YARA GALVA; RODRIGUES, ARIANO DE GIOVANNI; et al. Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires. PHYSICAL REVIEW MATERIALS, v. 3, n. 8, AUG 5 2019. (18/01808-5, 14/50513-7, 16/10668-7)

ALGHAMDI, HAIFA; GORDO, VANESSA ORSI; SCHMIDBAUER, MARTIN; FELIX, JORLANDIO F.; ALHASSAN, SULTAN; ALHASSNI, AMRA; PRANDO, GABRIELA AUGUSTA; COELHO-JUNIOR, HORACIO; GUNES, MUSTAFA; AVANCO GALETI, HELDER VINICIUS; et al. Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE. Journal of Applied Physics, v. 127, n. 12, MAR 31 2020. (19/07442-5, 18/01808-5, 16/10668-7)

SINGH, MOHIT KUMAR; BHUNIA, AMIT; AL HUWAYZ, MARYAM; GOBATO, Y. GALVAO; HENINI, MOHAMED; DATTA, SHOUVIK. Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dot-based p-i-n light emitting diodes. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 52, n. 9, FEB 27 2019. (18/01808-5, 16/10668-7)

PRANDO, G. A.; ORSI GORDO, V.; PUUSTINEN, J.; HILSKA, J.; ALGHAMDI, H. M.; SOM, G.; GUNES, M.; AKYOL, M.; SOUTO, S.; RODRIGUES, A. D.; et al. Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8, AUG 2018. (16/10668-7, 14/50513-7, 12/24055-6)

BHUNIA, AMIT; SINGH, MOHIT KUMAR; GALVAO GOBATO, Y.; HENINI, MOHAMED; DATTA, SHOUVIK. Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature. Journal of Applied Physics, v. 123, n. 4, JAN 28 2018. (16/10668-7)

AL MASHARY, FAISAL S.; FELIX, JORLANDIO F.; FERREIRA, SUKARNO O.; DE SOUZA, DANIELE; GOBATO, YARA G.; CHAUHAN, JASBINDER; ALEXEEVA, NATALIA; HENINI, MOHAMED; ALBADRI, ABDULRAHMAN M.; ALYAMANI, AHMED Y.. Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, v. 259, SEP 2020. (18/01808-5, 16/10668-7)

ASSIS, MARCELO; RIBEIRO, RENAN A. P.; CARVALHO COSTA, MARIA HELENA; MONDEGO TEIXEIRA, MAYARA; GALVAO GOBATO, YARA; PRANDO, GABRIELA A.; RENATO MENDONCA, CLEBER; DE BONI, LEONARDO; APARECIDO DE OLIVEIRA, ADILSON JESUS; BETTINI, JEFFERSON; et al. Unconventional Magnetization Generated from Electron Beam and Femtosecond Irradiation on alpha-Ag2WO4: A Quantum Chemical Investigation. ACS OMEGA, v. 5, n. 17, p. 10052-10067, MAY 5 2020. (18/11283-7, 13/07296-2, 16/10668-7, 16/20886-1, 18/01808-5, 17/24995-2)

BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GOBATO, Y. GALVAO; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; et al. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys (vol 814, 15223, 2020). Journal of Alloys and Compounds, v. 817, p. 1-pg., 2020-03-15. (14/50513-7, 18/01808-5, 16/10668-7)

FRANCO, DOUGLAS F.; MANZANI, DANILO; CARVAJAL, EDUAR E.; PRANDO, GABRIELA AUGUSTA; DONOSO, JOSE PEDRO; MAGON, CLAUDIO J.; ANTONIO, SELMA G.; GOBATO, YARA GALVAO; NALIN, MARCELO. Optical and EPR studies of zinc phosphate glasses containing Mn2+ ions. Journal of Materials Science, v. 55, n. 23, p. 14-pg., 2020-05-05. (16/16900-9, 18/16126-7, 13/07793-6, 16/10668-7)