Deposition of rare-earth doped SnO2 thin films and investigation of metallic electrodes and electrical transport

• Grant number: 10/16825-0
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Effective date (Start): January 01, 2011
• Effective date (End): December 31, 2011
• Field of knowledge: Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
• Principal Investigator: Luis Vicente de Andrade Scalvi
• Grantee: Aloisio de Andrade Bartolomeu
• Host Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil

Abstract

Production and electrical characterization of SnO2 thin films undoped and Er3+ or Yb3+ doped with different doping levels, deposited by the sol-gel process. Research will be carried out on the conductivity mechanisms in the semiconductor material and the influence of the metallic electrode, being deposited Sn, In and Al, as well as combinations of these metals, by the resistive evaporation technique. Measurements to be done include: resistivity as function of temperature, optical absorption, X-ray diffraction, current -voltage for several temperatures and decay of photoexcited conductivity. The scientific group has acquired good knowledge on the tin dioxide matrix of n-type (doped with donors) and trivalent rare-earth (acceptors).