Experimental study of spin effect in semiconductor heterostructures

• Grant number: 11/07872-8
• Support Opportunities: Scholarships in Brazil - Doctorate
• Start date: July 01, 2011
• End date: November 30, 2014
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Yara Galvão Gobato
• Grantee: Vanessa Orsi Gordo
• Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
• Associated research grant: 06/05765-1 - Spin effects in the electronic, optical and transport properties of extended and confined carrier systems, AP.TEM

Abstract

This research project intend to study the spin polarization in semiconductor resonant tunneling devices based on III - V systems. For this, we have a collaboration of Dr. Mohamed Henini the University of Nottingham (UK ) staff in the preparation and processing of different samples of semiconductor heterostructures. In general, we intend to investigate in these samples spin polarization of carriers in quantum well ( QW ) and quantum ( QD ) as a function of applied in the presence of high magnetic fields voltage points. In particular, we want to understand the role of tunneling and spin polarized carrier injection gas of two-dimensional (2D) near the barrier injection in spin polarization in the QW and quantum dot and etc. Furthermore we intend to study the spin polarization in semiconductor heterostructures of bismuth nitride films by measurements of photoluminescence resolved polarization in the presence of high magnetic fields, to understand the effect of spin in this new material. (AU)