Study of the electronic properties of carbon nanotubes and graphene with relativistics models

• Grant number: 11/16891-6
• Support Opportunities: Scholarships in Brazil - Master
• Start date: March 01, 2012
• End date: February 28, 2014
• Field of knowledge: Physical Sciences and Mathematics - Physics - Nuclear Physics
• Principal Investigator: Tobias Frederico
• Grantee: André Jorge Carvalho Chaves
• Host Institution: Divisão de Ciências Fundamentais (IEF). Instituto Tecnológico de Aeronáutica (ITA). Ministério da Defesa (Brasil). São José dos Campos , SP, Brazil
• Associated research grant: 09/00069-5 - Few-body aspects of many-body physics, AP.TEM

Abstract

The project has a the goal to apply effective quantum field models, developed by our group in recent works, to the study of eletronic properties of carbon nanotube and graphene. The first step of our work will be the extension of the formalism to finte temperature and densities, to study the dependence of the dynamically generatedgap as a function of temperature and chemical potential, in carbon nanotubes and graphene nanoribbons. Another aspect which will be tackled,is the relation between the work function and gap for dopped carbon nanotubes and graphene, relating the impurity concentration to changes in the Fermi level. In this project, we will also study the contribution of the excitons and electron-hole interaction to the eletronic properties of carbon nanotubes and graphene. It is already well known that electron-hole interactions are fundamental in the understanding the behavior of the conductivity in graphene. We aim to solve the Bethe-Salpeter equation in the nanotube and graphene surfaces, in order to obtain electron-hole bound states and moreover we will introduce the electron-hole interaction in the photonpolarization tensor, which allows the calculation of the conductivity. Also, we will explore the relation bewteen our effective field theoretical models with the traditional and established tight-binding and Hubbard models of solid state physics.