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Analytical Models for Static Electric Behaviour of FinFETs

Grant number: 12/12700-4
Support Opportunities:Scholarships in Brazil - Doctorate
Effective date (Start): October 01, 2012
Effective date (End): July 31, 2016
Field of knowledge:Engineering - Electrical Engineering - Electrical Materials
Principal Investigator:Renato Camargo Giacomini
Grantee:Arianne Soares do Nascimento Pereira
Host Institution: Centro Universitário FEI (UNIFEI). Campus de São Bernardo do Campo. São Bernardo do Campo , SP, Brazil
Associated research grant:08/05792-4 - Design, fabrication and characterization of FinFET transistors, AP.TEM
Associated scholarship(s):14/11627-7 - Study and analysis of compact models for UTBB SOI MOSFETs, BE.EP.DR

Abstract

The Silicon-On-Insulator (SOI) technology has been evolved and offered new devices' architectures, as Multiple Gate SOI transistors (SOI MuGFETs), that have excellent electrical characteristics. Among these new devices, the FinFET has been considered a good candidate for future industrial applications. Due to its constructive complexity and reduced dimensions, the FinFET does not count with funded analytical models and even its behavior is not well known in all operating conditions.This research project has as main objective to propose analytical models for static electric behaviour of FinFETs, such as threshold voltage, drain current, subthreshold slope and parasitic resistance.The models will be proposed based on the investigation of historical evolution of published models until the present state. The study will subsidy the proposition of the new analytical models, that may present advantages regarding the previous models, mainly as for simplicity and precision.The proposed models outputs will be compared to tridimensional numerical simulation data, as well as to published experimental data. A review of reached results will be made, in order to locate them in the international context of the research area.As major results, the proponent expects: the doctor's graduation and the generation of applicable knowledge for the scientific community.

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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
PEREIRA, A. S. N.; GIACOMINI, R.. An accurate closed-expression model for FinFETs parasitic resistance. MICROELECTRONICS RELIABILITY, v. 55, n. 3-4, p. 470-480, . (12/12700-4)

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