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Electrolyte-Gated transistors based on WO3 thin films: influence of the morphology and structure of the films on the device performance

Grant number: 14/27079-9
Support type:Scholarships in Brazil - Doctorate
Effective date (Start): May 01, 2015
Effective date (End): March 05, 2019
Field of knowledge:Engineering - Materials and Metallurgical Engineering
Cooperation agreement: Coordination of Improvement of Higher Education Personnel (CAPES)
Principal Investigator:Marcelo Ornaghi Orlandi
Grantee:Martin Schwellberger Barbosa
Home Institution: Instituto de Química (IQ). Universidade Estadual Paulista (UNESP). Campus de Araraquara. Araraquara , SP, Brazil
Associated research grant:13/07296-2 - CDMF - Center for the Development of Functional Materials, AP.CEPID
Associated scholarship(s):16/09033-7 - Electrolyte-gated transistors based on WO3 films, BE.EP.DR

Abstract

Electronic devices have a big market share and there is a continuous search for innovations to make them faster and more efficient. Between these devices, transistors correspond to approximately 4% of total market, and new technologies are wanted for the next generation of device technology. In this sense, fundamental research in Electrolyte-gated transistors are being studied with great interest, due to promising preliminary results. In this project, we intend to study the effects of morphology (shape and size) of WO3 nanostructures on electrolyte-gated transistors. The project will be developed between Unesp (Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, LIEC) and Montreal Polytechnic School (Advanced Electroactive Group). (AU)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
DE OLIVEIRA SILVAL, GABRIEL VINICIUS; SUBRAMANIAN, ARUNPRABAHARAN; MENG, XIANG; ZHANG, SHIMING; BARBOSA, MARTIN S.; BALOUKAS, BILL; CHARTRAND, DANIEL; GONZALES, JUAN C.; ORLANDI, MARCELO ORNAGHI; SOAVI, FRANCESCA; CICOIRA, FABIO; SANTATO, CLARA. Tungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 52, n. 30 JUL 24 2019. Web of Science Citations: 0.
BARBOSA, M. S.; OLIVEIRA, F. M. B.; MENG, X.; SOAVI, F.; SANTATO, C.; ORLANDI, M. O. Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. JOURNAL OF MATERIALS CHEMISTRY C, v. 6, n. 8, p. 1980-1987, FEB 28 2018. Web of Science Citations: 3.
Academic Publications
(References retrieved automatically from State of São Paulo Research Institutions)
BARBOSA, Martin Schwellberger. Estudo de desempenho e mecanismos de operação em transistors de interface eletrolítica baseados em óxido de tungstênio. 2019. 152 f. Doctoral Thesis - Universidade Estadual Paulista "Júlio de Mesquita Filho" Instituto de Química..

Please report errors in scientific publications list by writing to: cdi@fapesp.br.
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