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Radiation effects on triple-gate tunnel-FETs transistors

Grant number: 15/24817-1
Support type:Scholarships in Brazil - Master
Effective date (Start): May 01, 2016
Effective date (End): April 30, 2018
Field of knowledge:Engineering - Electrical Engineering
Principal Investigator:Paula Ghedini Der Agopian
Grantee:Henrique Lanza Faria Torres
Home Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

With the continuous reduction of the devices, the CMOS technology has been faced with problems such as short channel effects. Alternatively, the main industries have replaced the conventional CMOS technology by silicon on insulator (SOI) one. However, for dimensions below 22nm, even this technology has reached the limits of its escalation. Among the most promising alternatives studied by the scientific community to replace the MOS technology, one can cite the tunnel field effect transistor (TFET ), which is a device compatible with MOS technology, but with a different operation principle. In these devices the current is composed by tunneling of carriers among bands, which makes possible a significant reduction in the off-state current (IOFF) and also a subthreshold slope below the theoretical limit (60mV / dec at room temperature) This new device has a great potential for switching speed. This work aims to study the behavior of tunnel-FET transistors when submitted to radiation through a comparative analysis of the performance of these transistors before and after radiation. This study will take place both through experimental measurements, and with the numerical simulation devices (Atlas and / or Sentaurus) for different operating temperatures. (AU)

Academic Publications
(References retrieved automatically from State of São Paulo Research Institutions)
TORRES, Henrique Lanza Faria. Radiation effects on triple-gate tunnel-FET transistors.. 2018. Master's Dissertation - Universidade de São Paulo (USP). Escola Politécnica São Paulo.

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