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Electrolyte-gated transistors based on WO3 films

Grant number: 16/09033-7
Support type:Scholarships abroad - Research Internship - Doctorate
Effective date (Start): September 01, 2016
Effective date (End): August 31, 2017
Field of knowledge:Engineering - Materials and Metallurgical Engineering
Principal Investigator:Marcelo Ornaghi Orlandi
Grantee:Martin Schwellberger Barbosa
Supervisor abroad: Clara Santato
Home Institution: Instituto de Química (IQ). Universidade Estadual Paulista (UNESP). Campus de Araraquara. Araraquara , SP, Brazil
Local de pesquisa : École Polytechnique de Montréal, Canada  
Associated to the scholarship:14/27079-9 - Electrolyte-Gated transistors based on WO3 thin films: influence of the morphology and structure of the films on the device performance, BP.DR

Abstract

The main motivation for this project is to explore and exploit the electrolyte gating concept through the study of the physicochemical aspects of electrolyte gating and the design of electronic device structures, mainly transistors. Transistors are electronic devices that are able to switch and amplify electrical currents. Between the multiple approaches in transistor engineering, there is an ongoing search for low power consumption solutions. In this sense, electrolyte gating (based on the use of liquid electrolytic solutions or gels) is a very promising approach due to the high capacitance and low contact resistance that can be achieved.Specifically, we propose to study the influence of the morphology of tungsten trioxide (WO3)-based nanostructures on the device characteristics of electrolyte-gated transistors employing WO3 as the channel material.The project is intended to be carried out under supervision of both prof. Marcelo O. Orlandi (IQ-UNESP) and prof. Clara Santato (Polytechnique Montreal): part of the activities of the PhD (synthesis and electron microscopy characterization) is taking place in Brazil and part is planned to take place in Canada (device fabrication), to synergistically combine the expertise and infrastructure of the two groups, thus opening the possibility to achieve transformative results.

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
DE OLIVEIRA SILVAL, GABRIEL VINICIUS; SUBRAMANIAN, ARUNPRABAHARAN; MENG, XIANG; ZHANG, SHIMING; BARBOSA, MARTIN S.; BALOUKAS, BILL; CHARTRAND, DANIEL; GONZALES, JUAN C.; ORLANDI, MARCELO ORNAGHI; SOAVI, FRANCESCA; CICOIRA, FABIO; SANTATO, CLARA. Tungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 52, n. 30 JUL 24 2019. Web of Science Citations: 0.
BARBOSA, M. S.; OLIVEIRA, F. M. B.; MENG, X.; SOAVI, F.; SANTATO, C.; ORLANDI, M. O. Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. JOURNAL OF MATERIALS CHEMISTRY C, v. 6, n. 8, p. 1980-1987, FEB 28 2018. Web of Science Citations: 3.

Please report errors in scientific publications list by writing to: cdi@fapesp.br.
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