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Development of fabrication process of focal plane arrays

Grant number: 16/05516-3
Support type:Scholarships abroad - Research
Effective date (Start): January 20, 2017
Effective date (End): January 19, 2018
Field of knowledge:Engineering - Electrical Engineering
Principal Investigator:Gustavo Soares Vieira
Grantee:Gustavo Soares Vieira
Host: Sanjay Krishna
Home Institution: Instituto de Estudos Avançados (IEAv). Departamento de Ciência e Tecnologia Aeroespacial (DCTA). Ministério da Defesa (Brasil). São José dos Campos , SP, Brazil
Local de pesquisa : Ohio State University, Columbus, United States  


The present project aims to complement a development of infrared sensors fabrication processes that has been conducted by an association of Brazilian universities and technological institutes, acquiring know-how in a fabrication step that is not possible to do in Brazil nowadays, and than, establishing a Brazilian capability to realize all fabrication steps of some infrared focal plane arrays, FPA. The infrared sensors that have been developed are: quantum well infrared photodetectors, QWIP, quantum dot infrared photodetector, QDIP, InGaAs photodiodes, and dual-band sensors with hybrid technology. The group has been dealing with almost all aspects of those sensors production, including the project of epitaxial growth processes, the epitaxial growth itself, post-growth processing and final device characterization. For the fabrication of FPAs in Brazil nowadays, the main problem is the inexistency of a national facility with all the necessary infrastructure for post-growth processing, including the final part of: flip-chip bond between the sensor array and the readout integrated circuit, ROIC, epoxy filling of the space between than, substrate thinning or removal, and antireflection coating deposition. Today, there is no laboratory in Brazil with all the necessary facilities to make infrared FPAs. Even to make low quality FPAs, it is necessary to have some equipment that is not available in any Brazilian laboratory. Specially, for the flip-chip bonding, it is necessary a high cost equipment that is not available in Brazil. Making all fabrication steps in a foreign laboratory, that has all the necessary facilities, will accelerate the development process and allow a better specification of needed equipment and installations, helping to build up the necessary infrastructure in a Brazilian laboratory, when comes the time for that. It is also intended to compare devices done using wafers with epitaxial growth done both, in Brazil and at the University of New Mexico (where this postdoctoral work should be done). The fabrication of infrared FPAs with epitaxial growth done in Brazil will demonstrate that all fabrication steps can be done by Brazilians (or people living in Brazil), what is a persuasive argument to local investors. The chosen university has an active and recognized group on infrared sensors development, having the entire infrastructure necessary to fabricate FPAs, and they are willing to receive me as a postdoctoral researcher and give access to the whole infrastructure. This one year work will focus on acquiring the necessary skills for the fabrication of infrared focal plane arrays, along with the knowledge of equipment and material specification. Specially, the priority will be given to the fabrication of the sensors array itself, the flip-chip bonding, epoxy back filling, substrate thinning or removal, and antireflection coating deposition. FPAs will be produced using both, samples grown at UNM and samples grown at Brazilian laboratories. It aims to compare the performance of FPAs built up from different sources of epitaxial growth. Besides the fabrication of FPAs with QWIP samples, we intendent to work with the development of fabrication processes for FPAs made of type II superlattices. This technology has been pointed as having potential for becoming the next dominant technology for infrared sensors, but still has significant challenges, especially in the post-growth processing. No Brazilian group develops experimental work with this kind of sensor today. (AU)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
BRAGA, O. M.; DELFINO, C. A.; KAWABATA, R. M. S.; PINTO, L. D.; VIEIRA, G. S.; PIRES, M. P.; SOUZA, P. L.; MAREGA, E.; CARLIN, J. A.; KRISHNA, S. Surface Passivation of InGaAs/InP p-i-n Photodiodes Using Epitaxial Regrowth of InP. IEEE SENSORS JOURNAL, v. 20, n. 16, p. 9234-9244, AUG.15, 2020. Web of Science Citations: 0.

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