Growth and characterization of two-dimensional heterostructures: transition metal dichalcogenides on graphene and hexagonal boron nitride

• Grant number: 16/21402-8
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• Effective date (Start): January 01, 2017
• Effective date (End): January 23, 2018
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Acordo de Cooperação: Coordination of Improvement of Higher Education Personnel (CAPES)
• Principal Investigator: Abner de Siervo
• Grantee: Luis Henrique de Lima
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil

Abstract

Recently, two-dimensional (2D) materials as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides have received enormous attention due to their fascinating properties and great potential for technological applications. An interesting possibility is the design of heterostructures from the stacking of different monolayers of 2D materials, with these new materials presenting distinct properties. In this project, we propose to growth monolayers of transition metal dichalcogenides, in particular, MoSe2 and HfSe2, on graphene and h-BN supported on Ni(111) surface. The aim is to obtain the parameters that allow the controlled growth (layer-by-layer) of high-quality ultrathin films, which will have their atomic and electronic structure characterized in situ by multiple experimental techniques. It will also be investigated the influence of the distinct substrates (graphene and h-BN) in the electronic/structural properties of the TMDs ultrathin films. The achievement of 2D materials heterostructures with controlled number and orientation of the monolayers represents nowadays an important technological challenge that is essential for future applications of these materials in nano/optoelectronic devices. (AU)

Scientific publications

(6)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

BARRETO, LUCAS; DE LIMA, LUIS HENRIQUE; MARTINS, DANIEL COUTINHO; SILVA, CAIO; DE CAMPOS FERREIRA, RODRIGO CEZAR; LANDERS, RICHARD; DE SIERVO, ABNER. Selecting `convenient observers' to probe the atomic structure of CVD graphene on Ir(111) via photoelectron diffraction. JOURNAL OF PHYSICS-CONDENSED MATTER, v. 33, n. 10, MAR 10 2021. (07/08244-5, 07/54829-5, 16/21402-8)

DO AMARAL, GABRIELA MOURA; TONON, ISABELA DA COSTA; PENA ROMAN, RICARDO JAVIER; PLATH, HANNAH DE OLIVEIRA; TANIGUCHI, THEO MASSAO; DE LIMA, LUIS HENRIQUE; ZAGONEL, LUIZ FERNANDO; LANDERS, RICHARD; DE SIERVO, ABNER. Epitaxial growth, electronic hybridization and stability under oxidation of monolayer MoS2 on Ag(111). Applied Surface Science, v. 538, FEB 1 2021. (07/54829-5, 18/08543-7, 16/21402-8, 07/08244-5)

HERRERA-REINOZA, NATALY; DOS SANTOS, ALISSON CECCATTO; DE LIMA, LUIS HENRIQUE; LANDERS, RICHARD; DE SIERVO, ABNER. Atomically Precise Bottom-Up Synthesis of h-BNC: Graphene Doped with h-BN Nanoclusters. CHEMISTRY OF MATERIALS, v. 33, n. 8, p. 12-pg., 2021-03-24. (07/08244-5, 16/21402-8, 07/54829-5)

BARRETO, LUCAS; DE LIMA, LUIS HENRIQUE; MARTINS, DANIEL COUTINHO; SILVA, CAIO; DE CAMPOS FERREIRA, RODRIGO CEZAR; LANDERS, RICHARD; DE SIERVO, ABNER. Selecting 'convenient observers' to probe the atomic structure of CVD graphene on Ir(111) via photoelectron diffraction. JOURNAL OF PHYSICS-CONDENSED MATTER, v. 33, n. 10, p. 8-pg., 2021-03-10. (07/54829-5, 16/21402-8, 07/08244-5)

DE CAMPOS FERREIRA, RODRIGO CEZAR; DE LIMA, LUIS HENRIQUE; BARRETO, LUCAS; SILVA, CAIO C.; LANDERS, RICHARD; DE SIERVO, ABNER. Unraveling the Atomic Structure of Fe Intercalated under Graphene on Ir(111): A Multitechnique Approach. CHEMISTRY OF MATERIALS, v. 30, n. 20, p. 7201-7210, OCT 23 2018. (07/54829-5, 07/08244-5, 16/21402-8)

DE LIMA, L. H.; GREBER, T.; MUNTWILER, M.. The true corrugation of a h-BN nanomesh layer. 2D MATERIALS, v. 7, n. 3, JUL 2020. (16/21402-8)