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The performance comparative study between MOSFETs and SOI MOSFETs of 130nm technology node

Grant number: 16/25362-0
Support Opportunities:Scholarships in Brazil - Scientific Initiation
Effective date (Start): May 01, 2017
Effective date (End): April 30, 2019
Field of knowledge:Engineering - Electrical Engineering - Telecommunications
Principal Investigator:Paula Ghedini Der Agopian
Grantee:Carlos Augusto Zan Malaguti
Host Institution: Universidade Estadual Paulista (UNESP). Campus Experimental São João da Boa Vista. São João da Boa Vista , SP, Brazil


As the electronic devices are reduced to nanometric scales, the control of the short channel effects in conventional MOSFETs transistors has becoming harder and harder. The MOS transistors fabricated on SOI technology are one of the most important study areas nowadays, due to the excellent improvements in the performance of these devices, greater immunity to short channel effects and higher switching speed. In this project, intend to study the behavior of SOI MOSFETs transistors, by the comparison with the conventional MOSFETs technology. This scientific initiation project will be based on both experimental measurements of 130nm transistors and numerical simulations of the devices. The device simulator has been an essential role for this type of study, once allow us to understand better physic of the devices through the analysis of its internal parameters. (AU)

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