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Piezoelectric excitation of GHz vibrations in GaAs-based structures

Grant number: 17/24311-6
Support type:Scholarships abroad - Research Internship - Doctorate
Effective date (Start): May 15, 2018
Effective date (End): May 14, 2019
Field of knowledge:Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
Principal Investigator:Luis Vicente de Andrade Scalvi
Grantee:Diego Henrique de Oliveira Machado
Supervisor abroad: Paulo Ventura Santos
Home Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil
Local de pesquisa : Paul-Drude-Institut für Festkörperelektronik (PDI), Germany  
Associated to the scholarship:16/12216-6 - Heterojunctions of SnO2 for applications in optoelectronic devices:1) GaAs/SnO2, 2) grafeno/SnO2, BP.DR

Abstract

The general project of doctorate comprises the investigation of the transport properties in the SnO2/GaAs heterostructure, which has opened possibilities to several specific projects to which we have devoted in recent years, and that includes this research training at Paul-Drude-Institut,in Berlin, Germany, under supervision of Dr. Paulo V. Santos. The work being developed is based on the deposition of transparent and conductive oxides such as SnO2 or indium-tin-oxide for the formation of transparent contacts and heterojunction on GaAs. The SnO2 layer can be undoped or doped with rare-earth ions such as Ce3+ or Er3+, which have efficient optical emission in this matrix. This idea must gain an outstanding progress during this period of research to be spent at Paul Drude Institute. The obtained knowledge aims future use in optoelectronic devices, combining transport in GaAs layer with the emission efficiency of the rare earth in the SnO2 matrix. The activities to be carried out in Germany include the use of piezoelectric (e.g., ZnO and AlN) as well as transparent and conductive oxides (e.g., SnO2 and ITO) for the studies of the transport as well as for the modulation of GaAs microcavities by acoustic fields. For that purpose, we will use the oxides for the fabrication of transparent thin-film bulk acoustic resonators (FBAR) structures on GaAs layer structures produced by molecular beam epitaxy (MBE). These FBAR will then be used for the generation of sound waves for the acoustic transport of carriers in GaAs structures as well as for the control of light emission in (Al,Ga)As optical microcavities with strong light-matter coupling as well as vertical cavity surface emitting lasers (VCSEL). One will use analytical and numerical tools, rf-reflection and transmission measurements (s-parameters) to design the acoustic resonators, as well as photoluminescence and reflection spectroscopy of GaAs quantum well structures at He temperatures (4K) to probe the acoustic transport and modulation of the optical properties. In the acoustic transport, the carriers are captured and transported by the potential created by the sound wave. The conditions for effective injection of carrier from the conductive oxide in GaAs and for the long-range acoustic transport through GaAs substrates will be analyzed. The main objective of the Ph.D dissertation is the development of scientific and technological knowledge, and contribution to the making of electroluminescent devices and high mobility transparent transistors.

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
MACHADO, DIEGO H. O.; CRESPO-POVEDA, ANTONIO; KUZNETSOV, ALEXANDER S.; BIERMANN, KLAUS; SCALVI, LUIS V. A.; SANTOS, V, PAULO. Generation and Propagation of Superhigh-Frequency Bulk Acoustic Waves in GaAs. PHYSICAL REVIEW APPLIED, v. 12, n. 4 OCT 7 2019. Web of Science Citations: 0.

Please report errors in scientific publications list by writing to: cdi@fapesp.br.