Study, simulation and electrical characterization of the logic gates behavior when submitted to radiation

• Grant number: 18/24685-6
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Start date: February 01, 2019
• End date: November 30, 2019
• Field of knowledge: Engineering - Electrical Engineering - Telecommunications
• Principal Investigator: Paula Ghedini Der Agopian
• Grantee: Vivian do Amaral Daúd Höring
• Host Institution: Universidade Estadual Paulista (UNESP). Campus Experimental São João da Boa Vista. São João da Boa Vista , SP, Brazil

Abstract

The huge technology advance that we have today in microelectronics area is based on the ability to fabricated very small electronic circuits with the CMOS technology. Due to this fact, it is externally important to deeply study the MOSFET behavior and beyond that characterize its behavior in adverse environment. In this work, we will study and characterize the MOSFETs transistors pre and post irradiation with Co. Using the acquired knowledge with previous characterization, it will analyzed the electrical behavior of basic CMOS digital circuits operating in adverse environments. The logic gates that will be used are inverters, NANd and NOR gates. The irradiated logic circuits have a total ionization dose of 25kGy, 50kGy and 100kGy.