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Structure and electrical properties of multiferroic and ferroelectric domains

Grant number: 20/04071-3
Support type:Scholarships in Brazil - Post-Doctorate
Effective date (Start): September 01, 2020
Effective date (End): August 31, 2022
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:José Antonio Eiras
Grantee:Manojit De
Home Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
Associated research grant:17/13769-1 - Multiferroic and ferroelectric materials for energy converters: synthesis, properties, phenomenology and applications, AP.TEM


This postdoctoral project aims at the creation of new multiferroic and ferroelectric materials with the objective of estimating its potential applications in the development of new optoelectronic devices. In parallel, it is intended to make a detailed and systematic study of the principles that are at the origin and that govern the physical properties of the topological defects intrinsic to this type of materials, such as domain walls. The knowledge of physical properties associated to topological surfaces, such as electrical conductivity in domain walls, will contribute to the reduction of the knowledge shortage that currently exists. The possibility of manipulating the electrical conductivity of walls on nanometric scale using the conductive atomic force microscopy technique (c-AFM) motivated this work proposal. The study of the electrical conductivity of the domain walls in topological structures will initiate the cracking of new functional materials on nanometric scale, which can be applied in various fields of application such as the development of optoelectronic devices, memories, energy converters and spintronics. This project will take place in four main stages where a series of BiFeO3 and Pb [ZrxTi1-x]O3 will be deposited. Both series will be studied in a systematic way in order to obtain the best conditions of optimization of deposition of these materials. The method of deposition of both series will be deposited by the RF Sputtering method. The choice of these two materials is based on the possibility of making a comparative study between multiferroic and ferroelectric structures, about the nature of topological defects and their influence on the electric response in both types of materials. (AU)