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EGOFETs and Schottky diode: influence of the supramolecular arrangement on electrical properties

Grant number: 20/12060-1
Support Opportunities:Scholarships in Brazil - Post-Doctoral
Effective date (Start): October 01, 2021
Effective date (End): September 30, 2024
Field of knowledge:Engineering - Materials and Metallurgical Engineering
Principal Investigator:Neri Alves
Grantee:José Diego Fernandes Dias
Host Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil
Associated research grant:14/50869-6 - INCT 2014: on Organic Electronics, AP.TEM
Associated scholarship(s):22/14423-0 - Manufacture and optimization of biodegradable electronic devices, BE.EP.PD

Abstract

Most electronic devices made of organic materials are fabricated using a thin film as a signal transducer element, whose structuring (supramolecular arrangement), in addition to the physical and chemical characteristics of the material itself, is a fundamental factor in the optical and electrical properties of the film and respective device. In this project thin films (nanometers thick) of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) will be fabricated. The films will be produced using Physical Vapor Deposition (PVD) and Langmuir-Schaefer (LS) techniques. The main objectives of the project are: i) determine the supramolecular arrangement of DNTT PVD and LS films, which implies monitoring growth, verifying the formation of aggregates, or not, in the films, molecular organization, surface morphology on micro and nanometric scales and crystallinity; ii) fabricate electrolyte-dependent organic field effect transistors (EGOFETs) and Schottky diodes from DNTT PVD and LS films; and iii) investigate the influence of the supramolecular arrangement of these films on electrical properties, especially mobility in different directions (horizontal and vertical). Thus, it seeks to relate such mobility to the supramolecular arrangement and to the organic electrode-film interface. This project is part of the Thematic National Institute of Science and Technology (INCT) in Organic Electronics (INEO), 2014/50869-6, and will be developed under the supervision of Prof. Dr. Neri Alves. In addition, it provides for a BEPE internship to be held at Bangor University under the supervision of Prof. Dr. Jeff Kettley. (AU)

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Scientific publications (4)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
FERNANDES, JOSE DIEGO; MACEDO, WAGNER COSTA; VIEIRA, DOUGLAS HENRIQUE; FURINI, LEONARDO NEGRI; ALVES, NERI. Determination of the supramolecular arrangement of Dinaphtho [2,3-b:2?,3?-f]thieno[3,2-b]thiophene films fabricated by Physical Vapor Deposition and possible implications for electronic devices. Thin Solid Films, v. 772, p. 9-pg., . (20/12282-4, 14/11410-8, 14/11408-3, 13/14262-7, 18/22214-6, 20/12060-1)
RONCASELLI, LUCAS K. M.; SILVA, EDILENE A.; BRAUNGER, MARIA LUISA; RAMANITRA, HASINA H.; STEPHEN, MEERA; CITOLINO, LUCAS V. L.; FERNANDES, JOSE D.; SIMOIS, ANDRE V. S.; CONSTANTINO, CARLOS J. L.; AGOSTINI, DEUBER LINCON SILVA; et al. Influence of solvents on the morphology of Langmuir and Langmuir-Schaefer films of PCBM and PCBM-based oligomers and polymers. Physical Chemistry Chemical Physics, v. 24, n. 20, p. 15-pg., . (20/12060-1)
FERNANDES, JOSE DIEGO; VIEIRA, DOUGLAS HENRIQUE; KLEM, MAYKEL DOS SANTOS; ALVES, NERI. Dinaphtho[2,3-b:2 & PRIME;,3 & PRIME;-f]thieno[3,2-b]thiophene photoresistor: Generation of photocarriers and charge trapping. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 165, p. 10-pg., . (20/12060-1, 13/14262-7, 20/12282-4, 18/02604-4)
FURINI, LEONARDO NEGRI; FERNANDES, JOSE DIEGO; VIEIRA, DOUGLAS HENRIQUE; MORATO, LUIS FERNANDO DO CARMO; ALVES, NERI; CONSTANTINO, CARLOS JOSE LEOPOLDO. Combining Impedance Spectroscopy and Information Visualization Methods to Optimize the Detection of Carbendazim Using Layer-by-Layer Films. CHEMOSENSORS, v. 11, n. 4, p. 17-pg., . (20/12060-1, 20/12282-4, 18/22214-6)

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