Design of RF switches in BiCMOS technology and characterisation of novel devices at sub-THz frequencies

• Grant number: 24/04045-3
• Support Opportunities: Scholarships abroad - Research Internship - Master's degree
• Effective date (Start): November 04, 2024
• Effective date (End): May 03, 2025
• Field of knowledge: Engineering - Electrical Engineering - Telecommunications
• Principal Investigator: Rafael Abrantes Penchel
• Grantee: Elígia Simionato
• Supervisor: Philippe Ferrari
• Host Institution: Faculdade de Engenharia. Universidade Estadual Paulista (UNESP). Campus Experimental São João da Boa Vista. São João da Boa Vista , SP, Brazil
• Research place: Laboratoire Techniques De L'Informatique Et De La Microélectronique Pour L'Architecture Des Systèmes, France
• Associated to the scholarship: 23/12921-5 - Development of beamforming networks with transdirectional couplers for operation at sub-THz frequencies, BP.MS

Abstract

The frequencies in the sub-THz range (from 100 to 300 GHz) enable the utilization of vast amounts of new spectrum, which will be essential to realize the envisioned use cases for 6G and future generations of mobile networks. For that reason, the master's project being developed in Brazil, to which this project is related, intends to develop a Butler matrix based on metallic-nanowire-membrane (MnM) technology for operation in the D-band (110 to 175 GHz). The matrix will employ a novel design of a transdirectional coupler, using the slow wave technique. However, devices can be characterized in Brazil only up to 110 GHz, while in France it is possible to perform measurements on four-port devices up to 220 GHz. Therefore, this research internship project proposes the characterization of the D-band transdirectional coupler to evaluate the behaviour, at higher frequencies, of devices based on MnM technology using the slow wave technique. Furthermore, this research internship project also proposes studying and designingthe RF switches necessary for controlling the Butler matrix. These switches will bedeveloped to be compatible with BiCMOS technology, which will facilitate an understanding of the Butler matrix working as part of an integrated system, rather than an isolated device. In addition, this will aid in identifying the challenges of integrating the matrix with current industry-relevant technologies.