Special measurements for electrical characterization of state-of-the-art GaN-on-Si MISHEMT

• Grant number: 24/23864-5
• Support Opportunities: Scholarships abroad - Research Internship - Doctorate
• Start date: May 05, 2025
• End date: February 05, 2026
• Field of knowledge: Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Measurements, Instrumentation
• Principal Investigator: Paula Ghedini Der Agopian
• Grantee: Bruno Godoy Canales
• Supervisor: Bertrand Parvais
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Institution abroad: IMEC Belgium, Belgium
• Associated to the scholarship: 23/14492-4 - Electrical characterization of MISHEMT for high frequency analog blocks applications, BP.DR

Abstract

Transistors are fundamental components in electronics and are, therefore, directly related to technological advancement. The development of gallium nitride (GaN)-based transistors, such as the High Electron Mobility Transistor (HEMT), has significantly improved the performance of analog circuits and systems that operate at medium power and high frequencies, surpassing traditional silicon-based Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). Today, the evolution continues with the development of GaN-based devices, such as GaN MOSFETs, HEMTs and the Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs), which enable efficient operation at higher frequencies and powers levels than conventional silicon-based transistors. This is crucial for applications such as 5G and 6G, automotive radars and high-speed communication systems.This research project proposes the electrical characterization of state-of-the-art GaN-based MISHEMT/HEMT devices, aiming to evaluate their performance and underlying physical principles through an analysis of electrical characteristics. Besides the extraction of DC parameters at room temperature, this project will investigate the electron mobility, the temperature impact on device behavior and the current conduction under diverse biasing conditions, since it is so far not well stablished in the literature.Currently, imec (Leuven, Belgium) is conducting research in both radio frequency and power electronic domains; with all necessary materials available at this location. This work will be supervised by Prof. Dr. Bertrand Parvais, associated with the imec, Belgium.