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| Author(s): |
Helder Faria Andriolo
Total Authors: 1
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| Document type: | Master's Dissertation |
| Press: | Campinas, SP. |
| Institution: | Universidade Estadual de Campinas (UNICAMP). Instituto de Física Gleb Wataghin |
| Defense date: | 2015-11-17 |
| Examining board members: |
José Antonio Brum;
Alexandre Reily Rocha;
Kleber Roberto Pirota
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| Advisor: | José Antonio Brum |
| Abstract | |
In this work, we study a GaAs/In_{0.27}Ga_{0.73}As/Al_{0.3} Ga_{0.7}As system intentionally doped n-type material, which occurs a transfer of electrons from the doping into In_{0.27}Ga_{0.73}As quantum well, forming a two-dimensional electron gas in the well. Next, the effect of introducing self-assembled InAs quantum dots in the structure was analyzed. Our results show little change in potential profile of the structure. What happens after the introduction of quantum dots is basically a redistribution of electrons, that now occupy the quantum well and quantum dot. We also studied the optical properties, absorption and emission, of quantum dots coupled with carrier gas. This required establishing a method in which discretize the continuous energy levels of the carrier gas (electrons), the method by Wilson chain was used in the calculations, although other two methods also have been shown. Introduced, finally, a manganese ion in the center of the quantum dot, and we calculated emission spectra of this system, with the electron gas levels discretized by Wilson chain (AU) | |
| FAPESP's process: | 13/25371-1 - Optical properties of quantum dots coupled with carriers gas |
| Grantee: | Helder Faria Andriolo |
| Support Opportunities: | Scholarships in Brazil - Master |