CV Lattes
ORCID
Google Scholar Citations
Universidade Federal de São Carlos (UFSCAR). Centro de Ciências Exatas e de Tecnologia (CCET) (Institutional affiliation from the last research proposal) Birthplace: Brazil
Bachelor's in Physics from Universidad de La Habana (1994), master's in Physics Física from Universidad de La Habana (1996) and doctorate in Physics from Universidade Federal de São Carlos (2001). Currently, Associate Professor at Universidade Federal de São Carlos, with experience in Solid State Physics, focusing on Semiconductor Physics and Semiconductor Nanostructures, acting on the following subjects: nanoscopic devices, electronic band structure, spintronics, spin-orbit interaction and magneo-optical properties. Member of the University Center for Mountaneering (CUME). Coordinator of extension projects in mountaneering and management of protected areas. (Source: Lattes Curriculum)
| News published in Agência FAPESP Newsletter about the researcher |
| More itemsLess items |
| TITULO |
| Articles published in other media outlets ( ): |
| More itemsLess items |
| VEICULO: TITULO (DATA) |
| VEICULO: TITULO (DATA) |
Developments in materials synthesis and processing have allowed, for some time, the exploration of coherent electron dynamics in condensed matter systems. These studies, typically at low-temperatures and in highly pure and defect-free systems, reveal interesting properties in materials themselves. However, and perhaps more interestingly, these studies also probe the detailed quantum mecha…
(Only some records are available in English at this moment)
Memristive systems, or devices with intrinsic memory in general, are center pieces of a challenging and topical scientific field. They serve as grounds of promising technological breakthroughs for advanced computation, data security, and mobile communication. Building and exploiting theoretical models for studying the fundamental ingredients for memory emergence and how they intertwine to…
Impedance spectroscopy (IS) is crucial in material science, providing insights into electrical properties for advancements in batteries, fuel cells, solar cells, and sensors. In electrochemical devices, IS reveals real-time dynamic behavior but faces challenges due to sensitivity to experimental conditions, necessitating careful interpretation. The significance of IS in nano-electronic de…
The growing demand for more advanced, smaller, and more efficient information processing and sensing technologies drives the search for semiconductor materials with simplified processing, affordable cost, ecologically sustainable, and with adequate performance for specific applications. An intriguing phenomenon that appears in electronic devices based on semiconductor oxides is the so-cal…
The fabrication and characterization of graphene, in 2004, have opened new paths to the realization of a truly two-dimensional gas, with great perspectives to study both fundamental and applied physics related to quantum Hall effect, fractional quantum Hall effect, quantum anomalous Hall effect, quantum spin Hall effect, topological insulators, etc. Due to the low dimensionality and the s…
(Only some records are available in English at this moment)
As artificial intelligence and brain-inspired computing evolve, materials science is poised to drive transformative advancements in next-generation technologies. Traditional von Neumann computing architectures face significant energy inefficiencies due to the high data transfer demands between physically separated processing and memory units. Memristive devices offer a promising alternati…
Transition-metal dichalcogenides thin crystals rise as potential building blocks of thin electro-optical devices. Their electronic structure can be locally modified applying local stress or local electrostatic potentials (gates) to induce the appearance of barriers and/or wells for carrier confinement. Given the feasible manipulation of these quasi-2D systems, they can be used as thin fil…
This project proposes a sequence of tasks related to the systematic investigation of structural and electronic properties of bulk and nanostructured semiconductor prepared on the base of the II-VI materials, with and without manganese (Mn) incorporation. We will follow three major fields of investigation: i) Calculation of structural and electronic properties of bulk CdSe, such as wave fu…
| 1 / 1 | Ongoing grants |
| 10 / 9 | Completed research grants |
| 1 / 1 | Ongoing scholarships in Brazil |
| 10 / 6 | Completed scholarships in Brazil |
| 1 / 1 | Ongoing scholarships abroad |
| 2 / 2 | Completed scholarships abroad |
| 25 / 20 | All research grants and scholarships |
| Associated processes | |