Marcelo Antonio Pavanello

• SBMicro 2023 - 37th Symposium on Microelectronics Technology and Devices, AR.BR

• Abstract

  The semiconductor industry owes much of its success to the ability of continually downscale the devices (basically transistors) that make the integrated circuits (chips). This decrease in the size of the devices allows an increase in the number of transistors integrated in a single chip. It also allows the reduction of the dissipated power, larger memories and integration of new functiona…

  Atomistic simulation of nanowire MOSFETs electrical properties, AP.R
• SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, AR.BR

(Only some records are available in English at this moment)

• Abstract

  Quantum computing emerged as a way to increase the processing power of machines, solving problems in a much shorter time interval than would be required by conventional computers. However, the fundamental cell of quantum computers, the Qbits, are only operational at extremely cryogenic temperatures, in the range of thousandths of Kelvin. Furthermore, Qbits require integration with control…

  Operation of Stacked Nanowire and Nanosheet MOS Transistors in Cryogenic Temperatures, BP.MS

• Abstract

  The semiconductor industry owes much of its success to the ability to continually shrink the size of the transistors that make up integrated circuits (ICs). This decrease allows an increase in the number of transistors integrated into a single IC. It also makes it possible to reduce the power consumed, memories with larger storage capacity, and integration of new functionalities into the …

  STUDY OF THE THERMAL PROPERTIES OF NANOWIRE AND NANOSHEET MOS TRANSISTORS AT CRYOGENIC TEMPERATURES, BP.MS

• Abstract

  The semiconductor industry owes much of its success to the ability to continually shrink the size of the devices (basically transistors) that make up integrated circuits (chips). This decrease in the size of the devices allows an increase in the number of transistors integrated on a single chip. It also makes it possible to reduce the power consumed, manufacture larger memories and integr…

  Simulation and electrical characterization of nanowire MOS transistors at high temperatures, BP.IC

(Only some records are available in English at this moment)

• Abstract

  This project aims to sustain an international cooperation between the research group coordinated by Prof. Dr. Marcelo Antonio Pavanello, from Department of Electrical Engineering of Centro Universitário da FEI, situated in São Bernardo do Campo, Brazil, and the research group coordinated by Dr. Gilles Reimbold and Dr. Mikaël Cassé, from the Laboratoire d'électronique et de technologie de …

  Electrical characterization and tridimensional simulation of nanowires MOS transistors, BE.EP.DR

• Abstract

  This project aims to sustain an international cooperation between the research group coordinated by Prof. Dr. Marcelo Antonio Pavanello, from Department of Electrical Engineering of Centro Universitário da FEI, situated in São Bernardo do Campo, Brazil, and the research group coordinated by Dr. Olivier Faynot, from the Laboratoire d'électronique et de technologie de l'information (Leti), …

  Modeling, electrical characterization and electrical parameter extraction of junctionless MOS transistors, BE.EP.MS