Graduate at Engenharia Eletro Eletrônica from Universidade do Vale do Paraíba (1991), master's at Physic from Instituto Tecnológico de Aeronáutica (1994) and ph.d. at Electric Engineering from Universidade de São Paulo (1999). Has experience in Electric Engineering, focusing on Electric Materials, acting on the following subjects: plasma technology, dlc films, sputtering. (Source: Lattes Curriculum)
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Since the introduction of this new class of photovoltaic devices by Brian O'Regan and Michael Grätzel at the beginning of the 90s, several studies have been conducted to date in order to improve the energy conversion efficiency of dye-sensitized solar cell (DSSCs). Among the changes suggested by the scientific community, the most relevant are the properties of the various components that …
This proposal deals with the continuity of the projects funded by FAPESP in phases 1 and 2 of the PIPE program. At the end of the phase I, with the design and construction of a laboratory oxidation system that operates in discontinued way, it was possible to conduct proof of concept of thermo-oxidative process of polyacrylonitrile fiber (PAN) that is similar to the imported PANOx fiber pr…
(Only some records are available in English at this moment)
This work aims the development of piezoresistive sensors based on doped DLC thin films with different elements that allows its applications on hard environments. The thin films will be deposited by sputtering technique. The influence of the control variables of the deposition reactor on the thin films properties will be study. The thin films that present better characteristics will be sel…
Silicon dioxide (SiO2) thin films have been used as gate dielectric from many years in the MOS (Metal-Oxide-Semiconductor) - based integrated elements. Even though they have been thoroughly studied during years, the permanently growing demands of the microelectronic industry limit its application because of the increased density of the circuit elements. For thickness of the gate dielectri…
The quality of silicon oxide layers is fundamental for the good performance of semiconductor devices. Thermal oxidation is the most used method for growth of SiO2. In this work, an oxidation furnace will be used to produce to produce silicon oxide. Silicon samples will be exposed to oxygen atmosphere varying the following parameters: temperatures (from 850 to 1110ºC), the treatment time …
(Only some records are available in English at this moment)
| 14 / 11 | Completed research grants |
| 9 / 5 | Completed scholarships in Brazil |
| 23 / 16 | All research grants and scholarships |
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CV Lattes
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