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Yara Galvão Gobato

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Universidade Federal de São Carlos (UFSCAR). Centro de Ciências Exatas e de Tecnologia (CCET)  (Institutional affiliation for the last research proposal)
Birthplace: Brazil

Bachelor's in Physics from Universidade de São Paulo (1986), master's in Physics from Universidade de São Paulo (1989) and doctorate in Physics at Ecole Normale Superieurie/ Université Paris 6 (1993). She has experience in Physics, focusing on Electronic States, acting on the following subjects: photoluminescence, magneto-optics, magneto-transport, 2D semiconductors, semiconductor nanostructures and spintronics (Source: Lattes Curriculum)

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Scholarships abroad
FAPESP support in numbers * Updated April 10, 2021
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Scientific publications resulting from Research Grants and Scholarships under the grantee's responsibility (36)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

Publications36
Citations97
Cit./Article2.7
Data from Web of Science

FRANCO, DOUGLAS F.; MANZANI, DANILO; CARVAJAL, EDUAR E.; PRANDO, GABRIELA AUGUSTA; DONOSO, JOSE PEDRO; MAGON, CLAUDIO J.; ANTONIO, SELMA G.; GOBATO, YARA GALVAO; NALIN, MARCELO. Optical and EPR studies of zinc phosphate glasses containing Mn2+ ions. Journal of Materials Science, v. 55, n. 23, SI, . Web of Science Citations: 1. (16/16900-9, 18/16126-7, 13/07793-6, 16/10668-7)

KOIVUSALO, EERO S.; HAKKARAINEN, TEEMU V.; GALETI, HELDER V. A.; GOBATO, YARA G.; DUBROVSKII, VLADIMIR G.; GUINA, MIRCEA D.. Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires. Nano Letters, v. 19, n. 1, p. 82-89, . Web of Science Citations: 4. (16/10668-7, 14/50513-7)

PITON, MARCELO RIZZO; HAKKARAINEN, TEEMU; HILSKA, JOONAS; KOIVUSALO, EERO; LUPO, DONALD; AVANCO GALETI, HELDER VINICIUS; GOBATO, YARA GALVAO; GUINA, MIRCEA. Optimization of Ohmic Contacts to p-GaAs Nanowires. NANOSCALE RESEARCH LETTERS, v. 14, n. 1, . Web of Science Citations: 0. (14/50513-7, 16/10668-7)

AL MASHARY, FAISAL S.; DE CASTRO, SUELEN; DA SILVA, ARLON FERNANDO; FELIX, JORLANDIO FRANCISCO; PITON, MARCELO RIZZO; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; GOBATO, YARA GALVAO; AL SAQRI, NOOR; HENINI, MOHAMED; et al. Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. Journal of Alloys and Compounds, v. 766, p. 194-203, . Web of Science Citations: 6. (16/10668-7, 14/50513-7)

BALANTA, M. A. G.; ORSI GORDO, V.; CARVALHO, A. R. H.; PUUSTINEN, J.; ALGHAMDI, H. M.; HENINI, M.; GALETI, H. V. A.; GUINA, M.; GALVAO GOBATO, Y.. Polarization resolved photoluminescence in GaAs1-xBix/GaAs quantum wells. Journal of Luminescence, v. 182, p. 49-52, . Web of Science Citations: 4. (12/24055-6, 14/50513-7)

MONDAL, SANJIB; GHOSH, ANUPAM; RIZZO PITON, M.; GOMES, JOAQUIM P.; FELIX, JORLANDIO F.; GALVAO GOBATO, Y.; AVANCO GALETI, H. V.; CHOUDHURI, B.; DWIVEDI, S. M. M. DHAR; HENINI, M.; et al. Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 29, n. 22, p. 19588-19600, . Web of Science Citations: 3. (16/10668-7)

BHUNIA, AMIT; SINGH, MOHIT KUMAR; GOBATO, Y. GALVAO; HENINI, MOHAMED; DATTA, SHOUVIK. Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy. PHYSICAL REVIEW APPLIED, v. 10, n. 4, . Web of Science Citations: 0. (18/01808-5, 16/10668-7)

ORSI GORDO, V.; GALVO GOBATO, Y.; GALETI, H. V. A.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices. JOURNAL OF ELECTRONIC MATERIALS, v. 46, n. 7, p. 3851-3856, . Web of Science Citations: 2. (12/24055-6, 16/07239-7)

BALANTA, M. A. G.; KOPACZEK, J.; ORSI GORDO, V.; SANTOS, B. H. B.; RODRIGUES, A. D.; GALETI, H. V. A.; RICHARDS, R. D.; BASTIMAN, F.; DAVID, J. P. R.; KUDRAWIEC, R.; et al. Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 35, . Web of Science Citations: 7. (12/24055-6, 14/50513-7, 16/07239-7)

AL SAQRI, NOOR ALHUDA; MONDAL, ANIRUDDHA; FELIX, JORLANDIO FRANCISCO; GOBATO, YARA GALVAO; GORDO, VANESSA ORSI; ALBALAWI, HIND; JAMEEL, DLER; ALGHAMDI, HAIFA; AL MASHARY, FAISAL; TAYLOR, DAVID; et al. Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques. Journal of Alloys and Compounds, v. 698, p. 883-891, . Web of Science Citations: 9. (12/24055-6, 16/10668-7)

PITON, MARCELO RIZZO; HAKKARAINEN, TEEMU; HILSKA, JOONAS; KOIVUSALO, EERO; LUPO, DONALD; AVANCO GALETI, HELDER VINICIUS; GOBATO, YARA GALVAO; GUINA, MIRCEA. Optimization of Ohmic Contacts to p-GaAs Nanowires. NANOSCALE RESEARCH LETTERS, v. 14, n. 1, . Web of Science Citations: 0. (14/50513-7, 16/10668-7)

BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GALVAO GOBATO, Y.; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; et al. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys. Journal of Alloys and Compounds, v. 814, . Web of Science Citations: 1. (16/10668-7, 14/50513-7)

GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. JOURNAL OF ELECTRONIC MATERIALS, v. 47, n. 3, p. 1780-1785, . Web of Science Citations: 0. (12/24055-6, 16/10668-7)

AL SAQRI, NOOR ALHUDA; MONDAL, ANIRUDDHA; FELIX, JORLANDIO FRANCISCO; GOBATO, YARA GALVAO; GORDO, VANESSA ORSI; ALBALAWI, HIND; JAMEEL, DLER; ALGHAMDI, HAIFA; AL MASHARY, FAISAL; TAYLOR, DAVID; et al. Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques. Journal of Alloys and Compounds, v. 698, p. 883-891, . Web of Science Citations: 9. (16/10668-7, 12/24055-6)

LOPES-OLIVEIRA, V.; HERVAL, L. K. S.; ORSI GORDO, V.; CESAR, D. F.; DE GODOY, M. P. F.; GALVAO GOBATO, Y.; HENINI, M.; KHATAB, A.; SADEGHI, M.; WANG, S.; et al. Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response. Journal of Applied Physics, v. 116, n. 23, . Web of Science Citations: 5. (13/17657-2, 12/02655-1, 12/24055-6, 11/17944-6)

LEMINE, O. M.; ALKAOUD, A.; AVANCO GALETI, H. V.; GORDO, V. ORSI; GOBATO, Y. GALVAO; BOUZID, HOUCINE; HAJRY, A.; HENINI, M.. Thermal annealing effects on the optical and structural properties of (100) GaAs1-xBix layers grown by Molecular Beam Epitaxy. SUPERLATTICES AND MICROSTRUCTURES, v. 65, p. 48-55, . Web of Science Citations: 14. (12/24055-6)

KOIVUSALO, EERO S.; HAKKARAINEN, TEEMU V.; GALETI, HELDER V. A.; GOBATO, YARA G.; DUBROVSKII, VLADIMIR G.; GUINA, MIRCEA D.. Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires. Nano Letters, v. 19, n. 1, p. 82-89, . Web of Science Citations: 4. (16/10668-7, 14/50513-7)

ASSIS, MARCELO; RIBEIRO, RENAN A. P.; CARVALHO COSTA, MARIA HELENA; MONDEGO TEIXEIRA, MAYARA; GALVAO GOBATO, YARA; PRANDO, GABRIELA A.; RENATO MENDONCA, CLEBER; DE BONI, LEONARDO; APARECIDO DE OLIVEIRA, ADILSON JESUS; BETTINI, JEFFERSON; et al. Unconventional Magnetization Generated from Electron Beam and Femtosecond Irradiation on alpha-Ag2WO4: A Quantum Chemical Investigation. ACS OMEGA, v. 5, n. 17, p. 10052-10067, . Web of Science Citations: 0. (18/11283-7, 13/07296-2, 16/10668-7, 16/20886-1, 18/01808-5, 17/24995-2)

TEIXEIRA, MAYARA MONDEGO; GOBATO, YARA GALVA; GRACIA, LOURDES; DA SILVA, LUIS FERNANDO; AVANSI JR, WALDIR; ASSIS, MARCELO; DE OLIVEIRA, REGIANE CRISTINA; PRANDO, GABRIELA AUGUSTA; ANDRES, JUAN; LONGO, ELSON. Towards a white-emitting phosphor Ca10V6O25 based material. Journal of Luminescence, v. 220, . Web of Science Citations: 0. (18/01808-5, 13/07296-2)

HAKKARAINEN, TEEMU; PITON, MARCELO RIZZO; FIORDALISO, ELISABETTA MARIA; LESHCHENKO, EGOR D.; KOELLING, SEBASTIAN; BETTINI, JEFFERSON; AVANCO GALETI, HELDER VINICIUS; KOIVUSALO, EERO; GOBATO, YARA GALVA; RODRIGUES, ARIANO DE GIOVANNI; et al. Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires. PHYSICAL REVIEW MATERIALS, v. 3, n. 8, . Web of Science Citations: 0. (18/01808-5, 14/50513-7, 16/10668-7)

RODRIGUES, D. H.; BRASIL, M. J. S. P.; ORLITA, M.; KUNC, J.; GALETI, H. V. A.; HENINI, M.; TAYLOR, D.; GALVAO GOBATO, Y.. Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, n. 16, . Web of Science Citations: 0. (14/50513-7, 12/24055-6)

ORSI GORDO, V.; BALANTA, M. A. G.; GALVAO GOBATO, Y.; COVRE, F. S.; GALETI, H. V. A.; IIKAWA, F.; COUTO, JR., O. D. D.; QU, F.; HENINI, M.; HEWAK, D. W.; et al. Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers. NANOSCALE, v. 10, n. 10, p. 4807-4815, . Web of Science Citations: 7. (12/11382-9, 16/16365-6, 16/10668-7, 14/50513-7)

BHUNIA, AMIT; SINGH, MOHIT KUMAR; GALVAO GOBATO, Y.; HENINI, MOHAMED; DATTA, SHOUVIK. Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature. Journal of Applied Physics, v. 123, n. 4, . Web of Science Citations: 1. (16/10668-7)

PITON, MARCELO RIZZO; KOIVUSALO, EERO; HAKKARAINEN, TEEMU; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; TALMILA, SOILE; SOUTO, SERGIO; LUPO, DONALD; GOBATO, YARA GALVAO; GUINA, MIRCEA. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, v. 30, n. 33, . Web of Science Citations: 1. (18/01808-5, 14/50513-7, 16/10668-7)

SINGH, MOHIT KUMAR; BHUNIA, AMIT; AL HUWAYZ, MARYAM; GOBATO, Y. GALVAO; HENINI, MOHAMED; DATTA, SHOUVIK. Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dot-based p-i-n light emitting diodes. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 52, n. 9, . Web of Science Citations: 0. (18/01808-5, 16/10668-7)

GUNES, MUSTAFA; GUMUS, CEBRAIL; GOBATO, YARA GALVAO; HENINI, MOHAMED. Structural and optical properties of diluted magnetic Ga1-xMnxAs-AlAs quantum wells grown on high-index GaAs planes. BULLETIN OF MATERIALS SCIENCE, v. 40, n. 7, p. 1355-1359, . Web of Science Citations: 0. (12/24055-6)

GUNES, M.; UKELGE, M. O.; DONMEZ, O.; EROL, A.; GUMUS, C.; ALGHAMDI, H.; GALETI, H. V. A.; HENINI, M.; SCHMIDBAUER, M.; HILSKA, J.; et al. Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 12, . Web of Science Citations: 0. (14/50513-7, 16/10668-7)

ARAUJO E NOBREGA, J.; ORSI GORDO, V.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; ORLITA, M.; HENINI, M.. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots. SUPERLATTICES AND MICROSTRUCTURES, v. 88, p. 574-581, . Web of Science Citations: 2. (12/24055-6)

GORDO, V. ORSI; ARSLANLI, Y. TUNCER; CANIMOGLU, A.; AYVACIKLI, M.; GOBATO, Y. GALVAO; HENINI, M.; CAN, N.. Visible to infrared low temperature luminescence Er3+, Nd3+ and Sm3+ in CaSnO3 phosphors. Applied Radiation and Isotopes, v. 99, p. 69-76, . Web of Science Citations: 10. (12/24055-6, 13/17657-2)

AWAN, I. T.; GALETI, H. V. A.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes. Journal of Applied Physics, v. 116, n. 5, . Web of Science Citations: 0. (11/20985-6, 12/24055-6)

GALETI, H. V. A.; BEZERRA, A. T.; GALVAO GOBATO, Y.; BRASIL, M. J. S. P.; TAYLOR, D.; HENINI, M.. Optical and electrical control of spin polarization of two-dimensional hole gases in p-type resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 46, n. 50, . Web of Science Citations: 1. (12/24055-6)

DE HERVAL, L. K. S.; ARSLANLAR, Y. TUNCER; AYVACIKLI, M.; IIKAWA, F.; NOBREGA, J. A.; PIZANI, P. S.; GALVAO GOBATO, Y.; CAN, N.; HENINI, M.; DE GODOY, M. P. F.. Enhancement of the luminescence intensity by co-doping Mn2+ into Er3+-doped SrAl2O4. Journal of Luminescence, v. 163, p. 17-20, . Web of Science Citations: 6. (12/24055-6, 13/17657-2)

ALGHAMDI, HAIFA; GORDO, VANESSA ORSI; SCHMIDBAUER, MARTIN; FELIX, JORLANDIO F.; ALHASSAN, SULTAN; ALHASSNI, AMRA; PRANDO, GABRIELA AUGUSTA; COELHO-JUNIOR, HORACIO; GUNES, MUSTAFA; AVANCO GALETI, HELDER VINICIUS; et al. Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE. Journal of Applied Physics, v. 127, n. 12, . Web of Science Citations: 1. (18/01808-5, 19/07442-5, 16/10668-7)

PRANDO, G. A.; ORSI GORDO, V.; PUUSTINEN, J.; HILSKA, J.; ALGHAMDI, H. M.; SOM, G.; GUNES, M.; AKYOL, M.; SOUTO, S.; RODRIGUES, A. D.; et al. Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8, . Web of Science Citations: 0. (16/10668-7, 14/50513-7, 12/24055-6)

GALETI, H. V. A.; BRASIL, M. J. S. P.; GALVAO GOBATO, Y.; HENINI, M.. Voltage controlled electron spin dynamics in resonant tunnelling devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 47, n. 16, . Web of Science Citations: 1. (12/24055-6, 11/20985-6)

AL MASHARY, FAISAL S.; FELIX, JORLANDIO F.; FERREIRA, SUKARNO O.; DE SOUZA, DANIELE; GOBATO, YARA G.; CHAUHAN, JASBINDER; ALEXEEVA, NATALIA; HENINI, MOHAMED; ALBADRI, ABDULRAHMAN M.; ALYAMANI, AHMED Y.. Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, v. 259, . Web of Science Citations: 0. (18/01808-5, 16/10668-7)

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