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Gabriel Leonardo Nogueira


Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Faculdade de Ciências e Tecnologia (FCT)  (Institutional affiliation for the last research proposal)
Birthplace: Brazil

graduation at Licenciatura em Física from Universidade Estadual Paulista Júlio de Mesquita Filho (2013) and master's at Material and Metallurgical Engineering from Universidade Estadual Paulista Júlio de Mesquita Filho (2016). Has experience in Physics, focusing on Physics, acting on the following subjects: p3ht, permeable electrode, vertical transistor, pani and al2o3/pmma. (Source: Lattes Curriculum)

Scholarships in Brazil
FAPESP support in numbers * Updated July 04, 2020
Total / Available in English
Most frequent collaborators in research granted by FAPESP
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Scientific publications resulting from Research Grants and Scholarships under the grantee's responsibility (1)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

NOGUEIRA, GABRIEL LEONARDO; OZORIO, MAIZA DA SILVA; DA SILVA, MARCELO MARQUES; MORAIS, ROGERIO MIRANDA; ALVES, NERI. Middle Electrode in a Vertical Transistor Structure Using an Sn Layer by Thermal Evaporation. ELECTRONIC MATERIALS LETTERS, v. 14, n. 3, p. 319-327, . Web of Science Citations: 0. (13/26973-5, 14/13015-9)

Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

NOGUEIRA, Gabriel Leonardo. Preparação e caracterização de um transistor orgânico de efeito de campo com arquitetura vertical.  94 f. Dissertação (Mestrado) -  Universidade Estadual Paulista (Unesp) Faculdade de Ciências.  (13/26973-5

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