Iouri Poussep
CV Lattes
Universidade de São Paulo (USP). Instituto de Física de São Carlos (IFSC) (Institutional affiliation for the last research proposal) Birthplace: Rússia
ph.d. at Física de Estado Solido from Instituto de Física de Semicondutores (1985). Has experience in Physic, focusing on Electronic States, acting on the following subjects: raman, superlattices, phonons, transport and quantum dots. (Source: Lattes Curriculum)
- The research in new materials involving high magnetic fields and low temperatures, AP.TEM
Abstract
The present Proposal is a continuation of the research in new materials involving high magnetic fields and low temperatures, object of the preceeding Projeto Temático (Proc. FAPESP n. 07/50968-0) ended in May 30th, 2014. The Laboratório de Novos Materiais Semicondutores (LNMS/DFMT/IFUSP) and the Laboratório de Estado Sólido e Baixas Temperaturas (LESBT) do Departamento de Física dos Mat...
- Dynamics of excitons in quantized magnetic field in multi-component electron systems, AP.R
Abstract
Multi-component electron systems formed in one-dimensional (nanowires) and quasi-three-dimensional (multiple quantum wells) semiconductor hetero-structures will be investigated. We plan to study structural and electronic properties in different hetero-structured multiple well GaAs/GaP and InAs/InP nanowires grown by molecular beam epitaxy. Principally, the method which allows studying o...
- Carrier dinamics and quantum confinement in multi-component electron systems formed in heterostructured nanowires and in semiconductor multiple layers, AP.R
Abstract
Multi-component electron systems formed in one-dimensional (nanowires) and three-dimensional (multiple quantum wells) semiconductor hetero-structures will be investigated. We plan to study formation of electron states in conduction and valence bands in different hetero-structured multiple well GaAs/AlGaAs and InAs/InGaAs nanowires grown by molecular beam epitaxy using the time-resolved ...
- Exchange of researchers for growth and characterization of nanostructures, AP.R
Abstract
This proposal will enable the exchange of primary investigators (Ray La Pierre at McMaster, Yuri Pusep at Universidade de Sao Paulo) and graduate students. The project involves the growth of semiconductor nanowires for applications in photovoltacs (solar cells), photodetectors, and quantum information Processing devices. This proposal will fund a 1 week visit of the McMaster PI to the U...
(Only some records are available in English at this moment)
- Sample processing and study of electrical properties of semiconductor heterostructures, BP.IC
Abstract
The project is dedicated to study of processes involved in fabrication of semiconductor devices: photo-lithography, chemical etching and preparation of the ohmic contacts. These processes are considered as a part of planar technology. Using this processing the following structures will be prepared and their electrical properties will be studied: superlattices and quantum wells based on ...
- Study of multicomponent electron systems formed in semiconductor heterostructures, BP.DR
Abstract
Multi-component electron systems formed in one-dimensional (nanowires) and three-dimensional (multiple quantum wells) semiconductor hetero-structures GaAs/AlGaAs, GaAs/GaP e InAs/InP grown by molecular beam epitaxy will be investigated. The structural and electronic properties of these heterostructures will be studied using magneto-photoluminescence and magneto-transport measurements.
| 1 / 1 | Ongoing research grants |
| 20 / 10 | Completed research grants |
| 8 / 2 | Completed scholarships in Brazil |
| 29 / 13 | All research grants and scholarships |
| Associated processes | |
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
TITO, M. A.; PUSEP, YU. A.. Determination of mobility edge in presence of metal-to-insulator transition. SUPERLATTICES AND MICROSTRUCTURES, v. 104, p. 156-161, APR 2017. Web of Science Citations: 1. (15/16191-5, 14/24288-6)