- Research Grants
Has experience in Electric Engineering, focusing on Electronic Circuits (Source: Lattes Curriculum)
With the advance in the fabrication of integrated circuits technology, the transistors dimensions have been reduced to nanometric sizes, where problems as the short channel effect and the high dissipated power in the device become critical.In order to minimize the problem regarding the short channel effect emerged the structural alternative of replacing the traditional single-gate MOSFE...
(References retrieved automatically from State of São Paulo Research Institutions)
SIVIERI, Victor de Bodt. Estudo de transistores de tunelamento induzido por efeito de campo (TFET) construídos em nanofio.. 2016. Dissertação (Mestrado) - Escola Politécnica. Universidade de São Paulo (USP). São Paulo.