João Antonio Martino
CV Lattes
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Universidade de São Paulo (USP). Escola Politécnica (EP) (Institutional affiliation for the last research proposal) Birthplace: Brazil
bachelor's at Engenharia Eletrônica from Centro Universitário da FEI (1981), master's at Microeletrônica from Escola Politécnica da Universidade de São Paulo (1984) and doctorate at Microeletrônica from Escola Politécnica da Universidade de São Paulo (1988). He is currently full professor at Universidade de São Paulo. Has experience in Electric Engineering, acting on the following subjects: soi mosfet, finfet, caracterização elétrica, low temperature and analog performance. (Source: Lattes Curriculum)
- SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, AO.R
- Device physics and technological aspects of advanced CMOS devices and CMOS compatible alternative technologies for sensor applications, AV.EXT
Abstract
During this one-month period at the University of São Paulo, Prof. Dr. Cor Claeys is going to perform the following activities:1) Based on the experience of Prof. Claeys and scientific research activities, he will be giving lectures to graduate students on the introduction to low-frequency noises, illustrated by case studies related to advanced CMOS devices, which is one of their specia...
- 33rd Symposium on Microelectronics Technology and Devices, AR.BR
(Only some records are available in English at this moment)
- Project and fabrication of a BE SOI Tunnel-FET as biosensitive element, BP.DR
Abstract
Biosensors play a fundamental role on the improvement of life expectancy and its quality in a society, being extremely important to monitor in real time the development of diseases and even to prevent high-risk biological threats. Among the biosensitive platforms that are being studied and developed, micro and nanoelectronics devices built on SOI (Silicon-On-Insulator) substrates show g...
- BE SOI MOSFET transistors optimization for biosensor platform application, BP.DR
Abstract
This research project proposes, in an unprecedented way, the fabrication and electrical characterization of an optimized version of the BE SOI MOSFET ("Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor") for biosensor application. Nowadays this type of application is becoming very important to enable better life quality to the population. Many diseases...
- Comparative study of the self-heating effect on FinFET and SOI UTBB transistors, BP.MS
Abstract
This research project is a contribution to the technological development of micro and nanoelectronics in Brazil, as it intends to implement a system for measuring self-heating in advanced transistors in our country. Due to the reduction of devices dimensions and the use of new materials with low thermal conductivity, self-heating affects the performances of advanced transistors. Devices...
- Study, electrical characterization and modeling of be (back enhanced) SOI MOSFET transistors, BP.MS
Abstract
In order to improve the performance of transistors and make integrated circuits faster, the strategy of reducing the scale of transistors was used in the past, until parasitic effects due to this reduction of dimensions began to appear and degraded its performance. In this context, the SOI MOSFET technology has emerged as an alternative to the integrated circuit industry to surpass thes...
- Study of field induced tunneling effect transistor (Tunnel-FET) fabricated on silicon nanowire, BP.MS
Abstract
With the advance in the fabrication of integrated circuits technology, the transistors dimensions have been reduced to nanometric sizes, where problems as the short channel effect and the high dissipated power in the device become critical.In order to minimize the problem regarding the short channel effect emerged the structural alternative of replacing the traditional single-gate MOSFE...
(Only some records are available in English at this moment)
- Electrical characterization of advanced nanodevices, BE.PQ
Abstract
With the improvement of integrated circuit fabrication technology, the dimensions of the transistors were reduced to nanometric scales where problems such as short channel effect and the high power dissipation in the device became critical. In order to minimize the problem of short channel effect, new structural alternative to replace the traditional planar single gate MOSFET transistor...
- Floating body and coupling effects in ultrathin body and buried oxide FDSOI MOSFETs, BE.EP.DR
Abstract
In order to overcome the current limits for the devices' scaling, UTBB SOI MOSFET (Ultra-Thin-Body-and-Buried-oxide Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor) technology combined with the dynamic threshold voltage technique has been studied as a possible solution to reduce short channel effects and further improve the performance of these transistors. This i...
| 34 / 29 | Completed research grants |
| 2 / 2 | Ongoing scholarships in Brazil |
| 20 / 6 | Completed scholarships in Brazil |
| 3 / 2 | Completed scholarships abroad |
| 59 / 39 | All research grants and scholarships |
| Associated processes | |
(References retrieved automatically from State of São Paulo Research Institutions)
YOJO, Leonardo Shimizu. Estudo, caracterização elétrica e modelagem de transistores BE (Back Enhanced) SOI MOSFET.. 2018. Dissertação (Mestrado) - Escola Politécnica. Universidade de São Paulo (USP). São Paulo. (15/25100-3)
MORI, Carlos Augusto Bergfeld. Estudo comparativo do efeito de autoaquecimento em transistores FinFET e SOI UTBB.. 2018. Dissertação (Mestrado) - Escola Politécnica. Universidade de São Paulo (USP). São Paulo. (15/25101-0)
SIVIERI, Victor de Bodt. Estudo de transistores de tunelamento induzido por efeito de campo (TFET) construídos em nanofio.. 2016. Dissertação (Mestrado) - Escola Politécnica. Universidade de São Paulo (USP). São Paulo. (13/24472-9)
SASAKI, Katia Regina Akemi. Estudo de transistores SOI MOSFETs com camada de silício e óxido enterrado ultrafinos operando em modo de tensão de limiar dinâmica.. 2016. Tese (Doutorado) – Escola Politécnica. Universidade de São Paulo (USP). São Paulo. (13/13690-5)