Enhancing the Electrochemical and Electronic Performance of CVD-Grown Graphene by Minimizing Trace Metal Impurities

Author(s)

Iost, Rodrigo M. ^{[1, 2]} ; Crespilho, Frank N. ^[1] ; Zuccaro, Laura ^[2] ; Yu, Hak Ki ^[3] ; Wodtke, Alec M. ^[3] ; Kern, Klaus ^{[2, 4]} ; Balasubramanian, Kannan ^[2]

Affiliation

^[1] Univ Sao Paulo, Inst Quim Sao Carlos, BR-13560970 Sao Paulo - Brazil

^[2] Max Planck Inst Solid State Res, D-70569 Stuttgart - Germany

^[3] Max Planck Inst Biophys Chem, D-37077 Gottingen - Germany

^[4] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne - Switzerland

• Document type: Journal article
• Source: CHEMELECTROCHEM; v. 1, n. 12, p. 2070-2074, DEC 11 2014.
• Web of Science Citations: 15

Abstract

The presence of unwanted impurities in graphene is known to have a significant impact on its physical and chemical properties. Similar to carbon nanotubes, any trace metals present in graphene will affect the electrocatalytic properties of the material. Here, we show by direct electroanalysis that traces of copper still remain in transferred CVD (chemical vapor deposition)-grown graphene (even after the usual copper etching process) and strongly influence its electrochemical properties. Subsequently, we use a real-time electrochemical etching procedure to remove more than 90% of the trace metal impurities, with a clear improvement in both the electrochemical and electronic-transport properties of monolayer graphene. (AU)

• FAPESP's process: 13/04663-4 - Enzymatic bioelectrodes applied in biofuel cells: experimental and simulation
• Grantee: Frank Nelson Crespilho
• Support Opportunities: Regular Research Grants
• FAPESP's process: 13/14262-7 - Nanostructured films from biologically-relevant materials
• Grantee: Osvaldo Novais de Oliveira Junior
• Support Opportunities: Research Projects - Thematic Grants