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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

The electrodeposition of Ga-doped CuInSe2 thin film in the presence of Triton 100-X

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Lucas, F. Willian de S. [1] ; Lima, Alan R. F. [1] ; Mascaro, Lucia H. [1]
Total Authors: 3
[1] Univ Fed Sao Carlos, Dept Chem, BR-13565905 Sao Carlos, SP - Brazil
Total Affiliations: 1
Document type: Journal article
Source: Electrochimica Acta; v. 147, p. 47-53, NOV 20 2014.
Web of Science Citations: 4

The codeposition of Cu, In, Ga and Se from pH 1.5 at Na2SO4/H2SO4 solution onto fluorine doped tin oxide (FTO) was studied. The effects of Triton 100-X as a noncomplexing and nonionic additive in the electrodeposition process was evaluated. At optimised experimental conditions was possible to obtain of Ga-doped CuInSe2 films (CIGSe). The films presented two different morphologies, one layer formed by globular structures and another layer constituted of lamellar clusters. The major phase in the films was CIGSe, but binary phases as InSe and CuSe were also identified. The value of the band gap was at about 1.35 eV for all the films. It was observed that the additive presence in electrolytic bath reduces the number of surface defects and increases the crystallinity and purity of the electrodeposited CIGSe. (C) 2014 Published by Elsevier Ltd. (AU)

FAPESP's process: 08/57872-1 - National Institute for Materials Science in Nanotechnology
Grantee:Elson Longo da Silva
Support type: Research Projects - Thematic Grants
FAPESP's process: 12/10947-2 - Preparation and characterization of MBSe thin films (M = Ag or Cu; B = In, Ga, Sb or Tl; and S = S or Se) for application in photovoltaic cells"
Grantee:Francisco Willian de Souza Lucas
Support type: Scholarships in Brazil - Doctorate
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC