Slow light in semiconductor quantum dots: Effects of non-Markovianity and correlation of dephasing reservoirs

Author(s)

Mogilevtsev, D. ^{[1, 2]} ; Reyes-Gomez, E. ^{[3, 4]} ; Cavalcanti, S. B. ^[5] ; Oliveira, L. E. ^[4]

Affiliation

^[1] Univ Fed ABC, Ctr Ciencias Nat & Humanas, BR-09210170 Santo Andre, SP - Brazil

^[2] NASB, Inst Phys, Minsk 220072 - Byelarus

^[3] Univ Antioquia UdeA, Inst Fis, Medellin - Colombia

^[4] Univ Estadual Campinas UNICAMP, Inst Fis, BR-13083859 Campinas, SP - Brazil

^[5] Univ Fed Alagoas, Inst Fis, BR-5702970 Maceio, AL - Brazil

• Document type: Journal article
• Source: Physical Review B; v. 92, n. 23 DEC 30 2015.
• Web of Science Citations: 2

Abstract

A theoretical investigation on slow light propagation based on electromagnetically induced transparency in a three-level quantum-dot system is performed including non-Markovian effects and correlated dephasing reservoirs. It is demonstrated that the non-Markovian nature of the process is quite essential even for conventional dephasing typical of quantum dots leading to significant enhancement or inhibition of the group velocity slowdown factor as well as to the shifting and distortion of the transmission window. Furthermore, the correlation between dephasing reservoirs may also either enhance or inhibit non-Markovian effects. (AU)

• FAPESP's process: 12/51691-0 - The physics of new materials and semiconductor nanostructures
• Grantee: Luiz Eduardo Moreira Carvalho de Oliveira
• Support type: Research Projects - Thematic Grants
• FAPESP's process: 14/21188-0 - Quantum dynamics of systems with dissipative coupling
• Grantee: Valery Shchesnovich
• Support type: Research Grants - Visiting Researcher Grant - International