The origin of grain boundary capacitance in highly doped ceria

Souza, Eduardo Caetano C.; Goodenough, John B.

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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

The origin of grain boundary capacitance in highly doped ceria

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Author(s):	Souza, Eduardo Caetano C. ^[1] ; Goodenough, John B. ^[2] Total Authors: 2
Affiliation:	^[1] Univ Sao Paulo, Inst Quim, BR-05508000 Sao Paulo, SP - Brazil ^[2] Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 - USA Total Affiliations: 2
Document type:	Journal article
Source:	Physical Chemistry Chemical Physics; v. 18, n. 8, p. 5901-5904, FEB 28 2016.
Web of Science Citations:	1
Abstract
The origin of a grain-boundary capacitance in mixed oxide-ion/electronic conductors has been investigated for the case of Ce0.8Sm0.2O1.9-delta using a.c. impedance spectroscopy under low pO(2) from 250 to 400 degrees C. The observed capacitance is interpreted in terms of Ce-III:4f(1) electrons first introduced into the grains and not into the grain boundaries. (AU)

FAPESP's process:	12/15785-0 - Development and Characterization of New Conductor Materials based on Layered Niobates
Grantee:	Eduardo Caetano Camilo de Souza
Support Opportunities:	Scholarships in Brazil - Post-Doctoral

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