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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Solid-Vapor Reaction Growth of Transition-Metal Dichalcogenide Monolayers

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Li, Bo ; Gong, Yongji ; Hu, Zhili ; Brunetto, Gustavo ; Yang, Yingchao ; Ye, Gonglan ; Zhang, Zhuhua ; Lei, Sidong ; Jin, Zehua ; Bianco, Elisabeth ; Zhang, Xiang ; Wang, Weipeng ; Lou, Jun ; Galvao, Douglas S. ; Tang, Ming ; Yakobson, Boris I. ; Vajtai, Robert ; Ajayan, Pulickel M.
Total Authors: 18
Document type: Journal article
Source: ANGEWANDTE CHEMIE-INTERNATIONAL EDITION; v. 55, n. 36, p. 10656-10661, AUG 26 2016.
Web of Science Citations: 12
Abstract

Two-dimensional (2D) layered semiconducting transition-metal dichalcogenides (TMDCs) are promising candidates for next-generation ultrathin, flexible, and transparent electronics. Chemical vapor deposition (CVD) is a promising method for their controllable, scalable synthesis but the growth mechanism is poorly understood. Herein, we present systematic studies to understand the CVD growth mechanism of monolayer MoSe2, showing reaction pathways for growth from solid and vapor precursors. Examination of metastable nanoparticles deposited on the substrate during growth shows intermediate growth stages and conversion of non-stoichiometric nanoparticles into stoichiometric 2D MoSe2 monolayers. The growth steps involve the evaporation and reduction of MoO3 solid precursors to sub-oxides and stepwise reactions with Se vapor to finally form MoSe2. The experimental results and proposed model were corroborated by abinitio Car-Parrinello molecular dynamics studies. (AU)

FAPESP's process: 13/08293-7 - CCES - Center for Computational Engineering and Sciences
Grantee:Munir Salomao Skaf
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC