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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam

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Author(s):
de Almeida Maribondo Galvao, Nierlly Karinni ; de Vasconcelos, Getulio ; Ribeiro dos Santos, Marcos Valentim ; Bastos Campos, Tiago Moreira ; Pessoa, Rodrigo Savio ; Guerino, Marciel ; Djouadi, Mohamed Abdou ; Maciel, Homero Santiago
Total Authors: 8
Document type: Journal article
Source: MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 19, n. 6, p. 1329-1334, NOV-DEC 2016.
Web of Science Citations: 4
Abstract

The thermal decomposition of silicon carbide (SiC), with the subsequent formation of graphene, can be achieved by heating treatment. Several heating processes have been applied for this purpose by using SiC, either in form of powder particles or monocrystalline substrate. In this work, instead of using an expensive commercially available SiC wafer, a polycrystalline SiC substrate was obtained, based on powder metallurgy process, in order to explore the synthesis of graphene layers on its surface by using a CO2 laser beam as heating source. Different levels of energy density (fluence) were applied and Raman spectroscopy analyses demonstrated that graphene layers were formed on the polycrystalline SiC surface. The ratio of the integrated intensity of the D and G bands, and the crystallite size were calculated. The FWHM of the 2D band peaks are in excellent agreement with the range of values found in the literature. The samples irradiated with energy density of 138.4 J/cm(2) presented lower concentration of defects and higher crystallite size, while the lowest FWHM was obtained for energy density of 188 J/cm(2). The process occurred at room conditions and no gas flow was used. The results reveal a simple and cost-effective alternative for synthesis of graphene-based structures on SiC. (AU)

FAPESP's process: 11/50773-0 - Center of excellence in physics and applications of plasmas
Grantee:Ricardo Magnus Osório Galvão
Support type: Research Projects - Thematic Grants
FAPESP's process: 11/07468-2 - Study of the ethylene glycol size infuence on the mullite crystallization kinetics
Grantee:Tiago Moreira Bastos Campos
Support type: Scholarships in Brazil - Doctorate