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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Characterization of PECVD a-C:H:Si:O:Cl films

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Author(s):
Rossi, Diego ; Landers, Richard ; Bortoleto, Jose R. R. ; Durrant, Steven F.
Total Authors: 4
Document type: Journal article
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A; v. 35, n. 4, SI JUL-AUG 2017.
Web of Science Citations: 2
Abstract

Thin films were produced by plasma enhanced chemical vapor deposition of tetramethylsilane, chloroform, and argon mixtures. The partial pressure of chloroform in the chamber feed, CCl, was varied from 0% to 40%. Amorphous hydrogenated carbon films also containing silicon, oxygen, and small amounts of chlorine, a-C: H: Si: O: Cl, were produced at deposition rates of up to about 220nm min(-1) (for a CCl of 40%). Transmission infrared analyses revealed the presence of OH groups in chlorinated films, along with, among others, CH, C-C, Si-CH, Si-CH2, and Si-O-Si groups. As revealed by energy dispersive x-ray spectroscopy, the films could be doped with chlorine to a maximum of about 3 at. %. Surface morphology and roughness were examined using scanning electron microscopy and atomic force microscopy. Tauc band gaps, calculated from transmission ultravioletvisible near infrared spectra, tend to decrease from similar to 3.4 eV for unchlorinated films to around 2.5 eV for those doped with chlorine. (C) 2017 American Vacuum Society. (AU)

FAPESP's process: 14/21594-9 - Characterization of surfaces chlorinated in plasmas and chlorinated thin films deposited in plasmas
Grantee:Steven Frederick Durrant
Support type: Regular Research Grants