Bismuth doping on CuGaS2 thin films: structural and optical properties

Author(s)

Andrade, Jr., Marcos A. S. ^[1] ; Mascaro, Lucia H. ^[1]

Affiliation

^[1] Univ Fed Sao Carlos, Dept Chem, Rod Washington Luiz, Km 235, BR-13565905 Sao Carlos, SP - Brazil

• Document type: Journal article
• Source: MRS COMMUNICATIONS; v. 8, n. 2, p. 504-508, JUN 2018.
• Web of Science Citations: 0

Abstract

In this work, we present a solvothermal method to prepare bismuth (Bi)-doped CuGaS2 chalcopyrite nanocrystals ink and apply it to an all-solution-processed approach for the preparation of films with a thickness of approximately 730 nm and with enhanced optical properties and lower band gap energy than the undoped semiconductor films. The low-cost deposition method is comprised by spray deposition of the chalcogenide nanocrystals ink onto the molybdenum substrates, producing microcrystalline films with grains larger than 400 nm originated from coalescence of Bi-doped nanocrystals. Bi-doped CuGaS2 microcrystalline films are a good candidate to be applied as an absorber layer in thin-film solar cells. (AU)

• FAPESP's process: 14/50249-8 - Green chemistry: sustainable synthetic methods employing benign solvents, safer reagents, and bio-renewable feedstock
• Grantee: Arlene Gonçalves Corrêa
• Support Opportunities: Research Grants - Research Centers in Engineering Program
• FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
• Grantee: Elson Longo da Silva
• Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC
• FAPESP's process: 17/15144-9 - Metal-doped chalcogenides for application in intermediate band solar cells
• Grantee: Marcos Antonio Santana Andrade Junior
• Support Opportunities: Scholarships in Brazil - Post-Doctoral