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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Electroluminescence on-off ratio control of n-i-n GaAs/AlGaAs-based resonant tunneling structures

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Author(s):
Cardozo de Oliveira, E. R. [1, 2] ; Pfenning, A. [2] ; Guarin Castro, E. D. [1] ; Teodoro, M. D. [1] ; dos Santos, E. C. [1] ; Lopez-Richard, V. [1] ; Marques, G. E. [1] ; Worschech, L. [2] ; Hartmann, F. [2] ; Hoefling, S. [3, 2]
Total Authors: 10
Affiliation:
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Wurzburg, Rontgen Ctr Complex Mat Syst RCCM, Phys Inst, Tech Phys, D-97074 Wurzburg - Germany
[3] Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife - Scotland
Total Affiliations: 3
Document type: Journal article
Source: Physical Review B; v. 98, n. 7 AUG 1 2018.
Web of Science Citations: 1
Abstract

We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from higher to lower values and the EL on-off ratio is enhanced by two orders of magnitude compared to the current on-off ratio. By combining the EL and the current properties, we are able to identify two independent impact ionization channels associated with the coherent resonant tunneling current and the incoherent valley current. We also perform the same investigation with an associated series resistance, which induces a bistable electrical output in the system. By simulating a resistance variation for the current voltage and the EL, we are able to tune the EL on-off ratio by up to six orders of magnitude. We further observe that the EL on and off states can be either direct or inverted compared to the tunneling current of the on and off states. This electroluminescence, combined with the unique RTD properties, such as the negative differential resistance and high-frequency operation, enables the development of high-speed functional optoelectronic devices and optical switches. (AU)

FAPESP's process: 14/07375-2 - Multi-user equipment approved in grant 2013/18719-1: time resolved measurement system
Grantee:Marcio Daldin Teodoro
Support Opportunities: Multi-user Equipment Program
FAPESP's process: 14/02112-3 - Optical and transport phenomena in nano-devices
Grantee:Victor Lopez Richard
Support Opportunities: Regular Research Grants
FAPESP's process: 14/19142-2 - Characterization and processing of semiconductor nanostructures and application as devices
Grantee:Gilmar Eugenio Marques
Support Opportunities: Research Projects - Thematic Grants
FAPESP's process: 16/50080-9 - 1st Paulista-Bavarian Workshop on Nano-Tailored Semiconductor Devices (NTSD) | São Carlos - SP
Grantee:Gilmar Eugenio Marques
Support Opportunities: Organization Grants - Scientific Meeting
FAPESP's process: 13/18719-1 - Electronic carriers dynamics in semiconductor nanostructures
Grantee:Marcio Daldin Teodoro
Support Opportunities: Research Grants - Young Investigators Grants