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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Mesoscopic g-factor renormalization for electrons in III-V interacting nanolayers

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Author(s):
Toloza Sandoval, M. A. [1] ; Leon Padilla, J. E. [1] ; Ferreira da Silva, A. [1] ; de Andrada e Silva, E. A. [2] ; La Rocca, G. C. [3, 4]
Total Authors: 5
Affiliation:
[1] Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA - Brazil
[2] Inst Nacl Pesquisas Espaciais, BR-12201970 Sao Jose Dos Campos, SP - Brazil
[3] Scuola Normale Super Pisa, Piazza Cavalieri 7, I-56126 Pisa - Italy
[4] CNISM, Piazza Cavalieri 7, I-56126 Pisa - Italy
Total Affiliations: 4
Document type: Journal article
Source: Physical Review B; v. 98, n. 7 AUG 28 2018.
Web of Science Citations: 0
Abstract

The physics of the renormalization of the effective electron g factor by the confining potential in semiconductor nanostructures is theoretically investigated. The effective g factor for electrons in structures with interacting nanolayers, or coupled quantum wells (QWs), is obtained with an analytical and yet accurate multiband envelope-function solution, based on the linear 8 x 8 k . p Kane model for the bulk band structure. Both longitudinal and transverse applied magnetic fields are considered and the g-factor anisotropy (i.e., the difference between the two field configurations) is analyzed over the entire space spanned by the two structure parameters: the thickness of the active layers and the thickness of the tunneling barrier separating them. Two-dimensional anisotropy maps are constructed for symmetric and asymmetric InGaAs coupled QWs, with InP tunneling barriers, that reproduce exactly known single-layer or QW results, in different limits. The effects of the structure inversion asymmetry on the mesoscopic g-factor renormalization are also discussed, in particular the negative anisotropies for thin-layer structures. Such multilayer structures form an excellent testing ground for the theory, and the analytical solution presented, which is perfectly consistent over the whole space of parameters, leads to helpful expressions and can guide further research on the mechanisms of this mesoscopic renormalization. (AU)

FAPESP's process: 16/03854-9 - Spin-orbit interaction in semiconductor nanostructures and topological insulators
Grantee:Erasmo Assumpção de Andrada e Silva
Support type: Regular Research Grants