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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Resonant amplification via Er-doped clad Si photonic molecules: Towards compact low-loss/high-Q Si photonic devices

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Author(s):
Jarschel, P. F. [1] ; Frateschi, N. C. [1]
Total Authors: 2
Affiliation:
[1] Univ Estadual Campinas, Gleb Wataghin Phys Inst, BR-13083859 Campinas, SP - Brazil
Total Affiliations: 1
Document type: Journal article
Source: Solid-State Electronics; v. 155, p. 144-149, MAY 2019.
Web of Science Citations: 0
Abstract

Silicon photonics routers and band-pass filters employing ring resonators are usually constrained by a trade-off between quality factors and insertion loss, which is even more pronounced in compact designs. Device real estate is another factor to be considered for compactness and cost reduction. We propose an approach to simultaneously reduce insertion losses and increase the quality factor in such devices, while minimizing footprint. This approach consists in replacing the standard SiO2 top cladding of Si devices by erbium-doped Al2O3 films with a single post-processing step. Experimental results confirm the effectiveness of the method, where 1 dB output power increase is observed for a single ring device, in addition to an increase of 5% in the Q factor. In some cases of structures comprised of multiple coupled resonators, i.e., photonic molecules, the observed value of power increase is as high as 2.6 dB, with a Q factor increase of 25% and loss reduction of 3 dB. (AU)

FAPESP's process: 08/57857-2 - Photonics for optical communications
Grantee:Hugo Luis Fragnito
Support type: Research Projects - Thematic Grants
FAPESP's process: 14/04748-2 - Coupled microresonators applied to signal processing and photonics integration
Grantee:Mário César Mendes Machado de Souza
Support type: Scholarships in Brazil - Doctorate