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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Effect of the electrodeposition potential on the photoelectroactivity of the SnS/Sb2S3 thin films

Full text
Author(s):
de Araujo, Moises A. [1] ; Lucas, Francisco W. S. [2] ; Mascaro, Lucia H. [1]
Total Authors: 3
Affiliation:
[1] Univ Fed Sao Carlos, Dept Quim, Rodovia Washington Luiz, Km 235, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Sao Paulo, Inst Quim, Ave Trabalhador Sao Carlense 400, BR-33739900 Sao Carlos, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: Journal of Solid State Electrochemistry; v. 24, n. 2, SI JAN 2020.
Web of Science Citations: 0
Abstract

The present work outlines a simple and novel approach to obtain nanostructured and heterostructured SnS/Sb2S3 thin films. This material showed enhanced photoelectroactivity in comparison to the individual tin (II) sulphide (SnS) and antimony (III) sulphide (Sb2S3) films. These nanostructured films were grown by electrodeposition of antimony tin (SbSn) compound followed by sulphurisation under a sulphur vapour atmosphere. The optimisation of the growth methodology was systematically performed by evaluating the photoelectroactivity of the films prepared at different deposition potentials as well as by characterisation of the as-deposited binary compound and the films after sulphurisation. In comparison to the individual SnS and Sb2S3 films, the SnS/Sb2S3 one presented a photocurrent response increased 10-fold compared to the former and 48-fold compared to the latter. Further studies carried out by Mott-Schottky analysis and band gap determination confirmed that the band edge positions of the single SnS and Sb2S3 phases are suitably aligned, forming a type II heterostructure which facilitates minority carriers' separation and transportation and therefore improves the photocurrent density values. (AU)

FAPESP's process: 16/12681-0 - Preparation and characterization of ternary sulfide semiconductor thin films of antimony and tin, TAS (T = tin, antimony and A = S = sulfur), for use in photovoltaic cells
Grantee:Moisés Albuquerque de Araújo
Support type: Scholarships in Brazil - Doctorate
FAPESP's process: 18/03156-5 - A high-throughput combinatorial approach in the study of metallic alloys and their respective chalcogenides for application in the CO2 photo-/electrochemical reduction reaction
Grantee:Francisco Willian de Souza Lucas
Support type: Scholarships in Brazil - Post-Doctorate
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC
FAPESP's process: 18/16401-8 - Photocatalysts and photoelectrodes for obtaining renewable fuels
Grantee:Lucia Helena Mascaro Sales
Support type: Regular Research Grants