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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Doping quantum materials: Defects and impurities in FeGa3

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Author(s):
Alvarez-Quiceno, J. C. [1] ; Avila, M. A. [1] ; Osorio-Guillen, J. M. [2] ; Dalpian, G. M. [1]
Total Authors: 4
Affiliation:
[1] Univ Fed ABC, Ctr Ciencias Nat & Humanas, BR-09210170 Santo Andre, SP - Brazil
[2] Univ Antioquia UdeA, Inst Fis, Calle 70 52-21, Medellin - Colombia
Total Affiliations: 2
Document type: Journal article
Source: Physical Review B; v. 102, n. 9 SEP 29 2020.
Web of Science Citations: 0
Abstract

Defects and impurities strongly dictate the physical properties of materials by tuning conductivity, modulating magnetic response, and changing optical properties. Here we analyze how these entities behave in the prototype quantum material FeGa3. We have studied its intrinsic defects (vacancies, antisites, and interstitials) as well as different types of dopants such as Zn, Mn, Ge, Co, In, and Ru. Intrinsic defects are shown to have large formation energies, whereas dopants have a larger solubility. Different electronic and magnetic states, including localized polarons, were found to be induced by specific defect charge states, significantly altering the properties of the host material. (AU)

FAPESP's process: 17/10581-1 - Emergent phenomena in reduced dimension systems
Grantee:Pascoal Jose Giglio Pagliuso
Support type: Research Projects - Thematic Grants
FAPESP's process: 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties
Grantee:Adalberto Fazzio
Support type: Research Projects - Thematic Grants
FAPESP's process: 11/19924-2 - Study and development of advanced novel materials: electronic, magnetic and nanostructured: an interdisciplinary approach
Grantee:Carlos Rettori
Support type: Research Projects - Thematic Grants