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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas

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Author(s):
Hernandez, F. G. G. [1] ; Ferreira, G. J. [2] ; Luengo-Kovac, M. [3] ; Sih, V [3] ; Kawahala, N. M. [1] ; Gusev, G. M. [1] ; Bakarov, A. K. [4, 5]
Total Authors: 7
Affiliation:
[1] Univ Sao Paulo, Inst Fis, BR-05508090 Sao Paulo, SP - Brazil
[2] Univ Fed Uberlandia, Inst Fis, BR-38400902 Uberlandia, MG - Brazil
[3] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 - USA
[4] Novosibirsk State Univ, Novosibirsk 630090 - Russia
[5] Inst Semicond Phys, Novosibirsk 630090 - Russia
Total Affiliations: 5
Document type: Journal article
Source: Physical Review B; v. 102, n. 12 SEP 15 2020.
Web of Science Citations: 0
Abstract

Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv 2006.08253. Here, we demonstrate electrical control by drift transport in a system with two subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. The measured relaxation time presents strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along {[}110], the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along {[}1 (1) over bar0], the data shows spin lifetime that was gate dependent and longer than in the {[}110] direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion. (AU)

FAPESP's process: 16/50018-1 - Spin noise in two-dimensional electron gases
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants
FAPESP's process: 18/06142-5 - Kerr/Faraday rotation in quantum materials
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants
FAPESP's process: 15/16191-5 - The research in new materials involving high magnetic fields and low temperatures
Grantee:Gennady Gusev
Support type: Research Projects - Thematic Grants