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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system

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Author(s):
Mendes, A. C. [1] ; Maia, L. J. Q. [2, 3] ; Messaddeq, S. H. [2] ; Messaddeq, Y. [2] ; Ribeiro, S. J. L. [2] ; Li, M. Siu [1]
Total Authors: 6
Affiliation:
[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13566590 Sao Carlos, SP - Brazil
[2] UNESP, Inst Quim, BR-14801970 Araraquara, SP - Brazil
[3] Univ Fed Goias, Inst Fis, BR-74001970 Goiania, Go - Brazil
Total Affiliations: 3
Document type: Journal article
Source: PHYSICA B-CONDENSED MATTER; v. 406, n. 23, p. 4381-4386, DEC 1 2011.
Web of Science Citations: 4
Abstract

Oxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS(2)+Ga(2)O(3) (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351 nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics. (C) 2011 Elsevier B.V. All rights reserved. (AU)