Hole mobility in zincblende c-GaN

Rodrigues, C. G.; Fernandez, J. R. L.; Leite, J. R.; Chitta, V. A.; Freire, V. N.; Vasconcellos, A. R.; Luzzi, R.

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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Hole mobility in zincblende c-GaN

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Author(s):	Rodrigues, C. G. ; Fernandez, J. R. L. ; Leite, J. R. ; Chitta, V. A. ; Freire, V. N. ; Vasconcellos, A. R. ; Luzzi, R. Total Authors: 7
Document type:	Journal article
Source:	Journal of Applied Physics; v. 95, n. 9, p. 4914-4917, May 2004.
Field of knowledge:	Physical Sciences and Mathematics - Physics
Abstract
We consider the nonequilibrium thermodynamic state of carriers in III-nitrides, and calculate the mobility of holes in cubic GaN layers under electric fields of low intensity. The contribution of different scattering mechanisms to the mobility is analyzed, and the relevance of each one is characterized. Satisfactory agreement with recently published experimental data is obtained. (AU)

FAPESP's process:	02/06694-0 - Statistical Mechanics of Dissipative Systems Group
Grantee:	Roberto Luzzi
Support Opportunities:	Research Projects - Thematic Grants

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