Photoreflectance study of energy level structure o... - BV FAPESP
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(Reference retrieved automatically from Google Scholar through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 µm

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Author(s):
Rudno-Rudzi{\’n}ski‚ W. ; Ryczko‚ K. ; S{\k{e}}k‚ G. ; Misiewicz‚ J. ; Da Silva‚ MJ ; Quivy‚ AA
Total Authors: 6
Document type: Journal article
Source: Solid State Communications; v. 135, n. 4, p. 232-236, 2005.
FAPESP's process: 98/12779-0 - Experimental and theoretical study of the epitaxial semiconductor nanostructures derived from III-V compounds
Grantee:Gennady Gusev
Support Opportunities: Research Projects - Thematic Grants