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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Observation of the intrinsic spin Hall effect in a two-dimensional electron gas

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Author(s):
Hernandez, F. G. G. [1] ; Nunes, L. M. [1] ; Gusev, G. M. [1] ; Bakarov, A. K. [2]
Total Authors: 4
Affiliation:
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil
[2] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090 - Russia
Total Affiliations: 2
Document type: Journal article
Source: Physical Review B; v. 88, n. 16 OCT 29 2013.
Web of Science Citations: 19
Abstract

The experimental demonstration of the spin Hall effect in a high mobility two-dimensional electron system is reported. The spatial dependence is studied by Kerr rotation as a function of the external magnetic field using an applied electric field amplitude and direction as control parameters. We observe that the effect is robust in a bilayer structure with a nonzero Rashba coefficient displayed by an electrically controllable internal magnetic field, a large spin Hall conductivity in the range of the universal intrinsic value, and a mobility-enhanced spin diffusion constant. With the application of an unidirectional electric field, the role of the spin drift was also studied. The data was analyzed following both phenomenological and microscopic approaches and compared with experimental references in a single-layer configuration. (AU)

FAPESP's process: 13/03450-7 - The spin Hall effect in semiconductors
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants
FAPESP's process: 09/15007-5 - Magnetic dynamics in semiconductor nanocrystals
Grantee:Felix Guillermo Gonzalez Hernandez
Support type: Regular Research Grants
FAPESP's process: 10/09880-5 - The spin Hall effect in wide and double quantum wells
Grantee:Gennady Gusev
Support type: Regular Research Grants